Method for changing coupling property of double-layer graphene, and double-layer graphene
A double-layer graphene, coupling technology, applied in the field of graphene, can solve problems such as many steps and complicated processes, and achieve the effect of simple preparation method and changing coupling
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Embodiment 1
[0045] S1. Provide graphene samples and silicon wafers. The graphene samples are continuous graphene films with a double-layer structure. Transfer graphene samples to silicon wafers to form graphene / Si / SiO 2 hybrid;
[0046] S2, put the bracket into the container, add deionized water, and put the graphene / Si / SiO 2 The combination is placed on the scaffold, graphene / Si / SiO 2 The position of the combination in the airtight container is higher than the liquid level of deionized water, and the container is airtight, heated to 210°C, the pressure in the airtight container reaches 1908KPa, and kept for 3 hours;
[0047] S3, take out after cooling treatment, and obtain the target graphene product.
[0048]Studying the Raman spectrum of phonon vibration mode is one of the most effective technical means to characterize graphene materials. The frequency of this vibration mode is very low, which is very suitable for studying the low-energy electron excitation near the Dirac point of m...
Embodiment 2
[0050] S1. Provide graphene samples and silicon wafers. The graphene samples are continuous graphene films with a double-layer structure. Transfer graphene samples to silicon wafers to form graphene / Si / SiO 2 hybrid;
[0051] S2, put the support into the container, add ethanol solution, and put the graphene / Si / SiO 2 The combination is placed on the scaffold, graphene / Si / SiO 2 The position of the combination in the airtight container is higher than the liquid level of the ethanol solution, and the container is airtight, heated to 150°C, the pressure in the airtight container reaches 1002KPa, and kept for 3 hours;
[0052] S3, take out after cooling treatment, and obtain the target graphene product.
[0053] Raman Mapping tests were performed on the graphene before and after heat treatment. refer to Figure 4 , wherein figure a is the Raman mapping spectrum of the graphene sample before processing, and figure b is the Raman mapping spectrum of the target graphene product afte...
Embodiment 3
[0055] S1. Provide graphene samples and silicon wafers. The graphene samples are discrete domain graphene films with a double-layer structure. Transfer graphene samples to silicon wafers to form graphene / Si / SiO 2 hybrid;
[0056] S2, put the bracket into the container, add acetone solution, and put the graphene / Si / SiO 2 The combination is placed on the scaffold, graphene / Si / SiO 2 The position of the combination in the airtight container is higher than the liquid level of the acetone solution, and the container is airtight, heated to 145°C, the pressure in the airtight container reaches 1002KPa, and kept for 3 hours;
[0057] S3, take out after cooling treatment, and obtain the target graphene product.
[0058] Raman Mapping tests were performed on the graphene before and after heat treatment. refer to Figure 5 , wherein figure a is the Raman mapping spectrum of the graphene sample before processing, and figure b is the Raman mapping spectrum of the target graphene product...
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