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A method for manufacturing a three-dimensional heterogeneous radio frequency module based on a three-dimensional heat dissipation structure

A technology of radio frequency module and heat dissipation structure, which is applied in semiconductor/solid state device manufacturing, semiconductor/solid state device components, semiconductor devices, etc. The effect of improving the heat dissipation capacity

Active Publication Date: 2021-07-23
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for analog device chips such as radio frequency chips, the area cannot be reduced exponentially like digital chips. In this way, there will be no enough area for ultra-high frequency radio frequency microsystems to place PA / LNA at the same time. LNA stacked up
[0004] Modules for stacking generally embed PA / LNA into the cavity first, and then set up a micro-channel cooling device at the bottom of the cavity, but for a certain thickness of RF chip, the heat of the chip surface device must be conducted to the chip through the chip substrate. Only the bottom of the chip can dissipate heat, so simply setting heat dissipation grooves at the bottom of the chip can no longer meet the heat dissipation requirements of the module

Method used

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  • A method for manufacturing a three-dimensional heterogeneous radio frequency module based on a three-dimensional heat dissipation structure
  • A method for manufacturing a three-dimensional heterogeneous radio frequency module based on a three-dimensional heat dissipation structure
  • A method for manufacturing a three-dimensional heterogeneous radio frequency module based on a three-dimensional heat dissipation structure

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Embodiment 1

[0031] like Figure 1 to Figure 7 As shown, a method for manufacturing a three-dimensional heterogeneous radio frequency module based on a three-dimensional heat dissipation structure specifically includes the following steps:

[0032] 101) Manufacturing steps of the chip carrier 101: make grooves 102 on the lower surface of the chip carrier 101 by photolithography and etching process, the width of the grooves 102 ranges from 1um to 10000um, and the depth ranges from 10um to 1000um. Deposit silicon oxide or silicon nitride on the lower surface of the chip carrier 101, or directly thermally oxidize to form an insulating layer, make a seed layer on the insulating layer by physical sputtering, magnetron sputtering or evaporation process, and use photolithography and electroplating processes Bonding metal is fabricated on the seed layer to form pads. Among them, the specifications and dimensions of the insulating layer and the seed layer are as follows. If there is no special ins...

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Abstract

The invention discloses a method for manufacturing a three-dimensional heterogeneous radio frequency module based on a three-dimensional heat dissipation structure, which specifically includes the following steps: 101) a chip carrier manufacturing step, 102) an adapter board manufacturing step, and 103) a bonding step; the present invention A method for manufacturing a three-dimensional heterogeneous radio frequency module based on a three-dimensional heat dissipation structure is provided, which is provided with a large-flow heat dissipation groove.

Description

technical field [0001] The invention relates to the field of semiconductor technology, and more specifically, it relates to a method for manufacturing a three-dimensional heterogeneous radio frequency module based on a three-dimensional heat dissipation structure. Background technique [0002] Microwave and millimeter wave radio frequency integrated circuit technology is the foundation of modern national defense weaponry and Internet industry. Millimeter-wave radio frequency integrated circuits also have huge actual needs and potential markets. [0003] However, for high-frequency microsystems, the area of ​​the antenna array is getting smaller and smaller, and the distance between the antennas must be kept within a certain range so that the entire module can have excellent communication capabilities. However, for analog device chips such as radio frequency chips, the area cannot be reduced exponentially like digital chips. In this way, there will be no enough area for ultr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48H01L21/60H01L23/367H01L23/473
CPCH01L21/4882H01L23/3672H01L23/473H01L24/83H01L2224/832
Inventor 郁发新冯光建王志宇陈华张兵
Owner ZHEJIANG UNIV