Polycrystalline silicon resistor structure and manufacturing method thereof
A technology of polysilicon resistance and manufacturing method, which is applied in the direction of circuits, electrical components, and electric solid-state devices, can solve the problems of not fully utilizing the technology of flash memory devices, etc., and achieve the effects of reducing area, increasing resistance, and reducing costs
Active Publication Date: 2020-01-31
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology
There may be two layers of polysilicon in the structure of the flash memory device, including the floating gate and the control gate. Now the control gate is generally used as the base of the resistor, and the process technology of flash memory device manufacturing is not fully utilized.
Method used
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Embodiment Construction
[0042] figure 1 It is a structural schematic diagram of a polysilicon resistor structure. Please refer to figure 1 As shown, the flash memory device manufacturing process is adopted to form the control gate 10, a dielectric layer (not shown) is formed on the control gate 10, and then a through hole (not shown) exposing the control gate 10 is formed in the dielectric layer, Fill the through hole with a conductive material to form a conductive plug 11, a conductive plug 11 is formed at both ends of each control gate 10, and then connect every two adjacent said vias through a metal interconnection layer 12. Conductive plugs 11, that is, one end of each control gate 11 (for example figure 1 in the upper end) of the conductive plug 11 and one side thereof (for example figure 1 The conductive plug 11 on the left side of the middle) is connected, and the other end (for example figure 1 The lower side of the middle) of the conductive plug 11 and its other side (such as figure 1 T...
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The invention provides a polycrystalline silicon resistor structure and a manufacturing method thereof. Floating gates are formed on a substrate; a part of each isolation structure on one side of eachfloating gate is etched to a predetermined depth, so that first grooves can be formed and expose the floating gates; control gates are formed; the first grooves are filled with the control gates, sothat the floating gates can be connected with the control gates positioned above the floating gates so as to form a group of polycrystalline silicon resistors; conductive plugs are formed on the floating gates and the control gates; and the corresponding conductive plugs are connected through metal interconnection layers, so that the plurality of groups of polysilicon resistors can be connected inseries so as to form a polysilicon resistor structure; and therefore, resistance per unit area is increased, the area of a resistor required by a circuit is reduced, the area of a resistor region ina chip is reduced, and cost is reduced.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a polysilicon resistance structure in a flash memory device and a manufacturing method thereof. Background technique [0002] As the feature size (CD, Critical Dimension) of semiconductor devices becomes smaller and smaller, the integration of semiconductor chips becomes higher and higher, and the number and types of devices that need to be formed on a unit area are also increasing, so the semiconductor The requirements for craftsmanship are also getting higher and higher. How to rationally arrange the positions of various devices, and how to save semiconductor process steps and materials by using the common points of each device manufacturing has become a hot research topic. [0003] In the manufacture of semiconductor devices, polysilicon is a very common conductive material, which can usually be used to make gate electrodes of MOS transistors, high resista...
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IPC IPC(8): H01L27/11521H01L27/11536H01L27/11556H01L27/11558H10B41/30H10B41/27H10B41/44H10B41/60
CPCH10B41/44H10B41/60H10B41/27H10B41/30
Inventor 薛广杰
Owner WUHAN XINXIN SEMICON MFG CO LTD