Micro OLED displayer structure and preparation method thereof

A display and substrate technology, applied in the field of OLED display, can solve the problems of complicated process and TFE reliability, and achieve the effect of reducing process complexity, saving process cost and improving yield

Pending Publication Date: 2020-01-31
ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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  • Micro OLED displayer structure and preparation method thereof
  • Micro OLED displayer structure and preparation method thereof
  • Micro OLED displayer structure and preparation method thereof

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[0028] With reference to the accompanying drawings, the specific implementation of the present invention will be further described in detail through the description of the embodiments to help those skilled in the art have a more complete, accurate and in-depth understanding of the inventive concept and technical solution of the present invention.

[0029] figure 2 This is a schematic structural diagram of a Micro OLED display structure provided by an embodiment of the present invention. For ease of description, only parts related to the embodiment of the present invention are shown.

[0030] The structure includes:

[0031] The base includes a PAD connection area and a non-PAD connection area. The thickness of the base of the PAD connection area is thinner than that of the non-PAD connection area. The CMOS drive circuit is arranged in the non-PAD connection area to form a CMOS drive substrate. The PAD connection area is provided Several TSV through holes. Metal pillars that match th...

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Abstract

The invention discloses a Micro OLED displayer structure and a preparation method thereof. The structure comprises a substrate which comprises a PAD connection region and a non-PAD connection region.The substrate thickness of the PAD connection region is thinner than the substrate thickness of the non-PAD connection region. A CMOS driving circuit is arranged on the non-PAD connection region. ThePAD connection region is provided with a plurality of TSV vias, and metal columns adaptted to the size of the TSV vias are formed in the TSV vias. A metal PAD is arranged on the lower surface of the substrate. The upper surface of the metal PAD covers the bottom surface of the whole metal columns. An OLED light emitting region is arranged on the upper surface of the substrate. Continuous packagingfilms are arranged on the upper surface of the OLED light emitting region, the upper surface of the substrate not covering the OLED light emitting region and the top surface of the metal columns. Themetal PAD is connected with the CMOS circuit through the conductive medium through the technical means of the silicon deep hole, the metal PAD is arranged on the opposite side of the OLED light emitting region, the TFE patterning process is not required, the process complexity is reduced, the process cost is saved and the yield rate of the overall process is improved.

Description

technical field [0001] The invention belongs to the field of OLED display technology, and more specifically, the invention relates to a Micro OLED display structure and a preparation method thereof. Background technique [0002] Micro OLED (Organic Light Emitting Display) is known as the dark horse of next-generation display technology. It has been widely used in military markets such as machine-mounted helmets, gun sights, and night vision devices. With the development of new technologies such as AR / VR and automatic driving Applications, Micro OLED microdisplay will usher in explosive growth. Most of the existing terminal products on the market are head-mounted or wearable devices. [0003] The Micro OLED preparation process can basically be summarized as CMOS preparation, OLED evaporation, TFE packaging, color film preparation, cover plate lamination, module preparation, etc.; The structure is patterned to reveal the metal pad structure on the same side as the display ar...

Claims

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Application Information

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IPC IPC(8): H01L27/32H01L23/48H01L21/768H01L21/77
CPCH01L23/481H01L21/76898H10K59/131H10K59/1201
Inventor 李雪原任清江晋芳铭曹贺吕磊许嵩
Owner ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
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