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Memory circuit and method for operating three-dimentional cross point memory array

A memory circuit and memory array technology, applied in the field of decoding operations, can solve the problems of complicated decoders and large decoders, etc.

Active Publication Date: 2020-02-04
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Stacking more memory arrays or adding more layers of memory cells in a 3D cross-point memory array results in a larger decoder
Larger decoders can be complex and require more regions

Method used

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  • Memory circuit and method for operating three-dimentional cross point memory array
  • Memory circuit and method for operating three-dimentional cross point memory array
  • Memory circuit and method for operating three-dimentional cross point memory array

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Embodiment Construction

[0087] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0088] Refer to Figure 1- Figure 8 A detailed description of embodiments of the present technology is provided.

[0089] Figure 1A A 3D cross-point memory array 100 with bidirectional memory cells is shown. The 3D cross-point memory array 100 includes a plurality of bidirectional memory cells, including bidirectional memory cells 121 , 122 , 123 , 124 . The bidirectional memory cells are arranged on a plurality of first access lines 111, 112, 113, 114, 115 and 116 arranged in the column direction and a plurality of second access lines 101, 102, 103, 104, 105 arranged in the row direction , 106, 107, 108 and 109 intersections. The column and row directions are orthogonal directions or non-parallel directions so that a ...

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Abstract

The invention discloses a memory circuit and a method for operating a three-dimentional cross point memory array. The memory circuit includes a three-dimensional cross point memory array having M levels of memory cells disposed in cross points of N first access line layers and P second access line layers. The memory circuit further comprises first and second sets of first access line drivers. Thefirst set of first access line drivers is operatively coupled to apply a common first operational voltage to selected first access lines in odd first access line layers. The second set of first accessline drivers is operatively coupled to apply the common first operational voltage to selected first access lines in even first access layers. A plurality of sets of second access line drivers is operatively configured to apply a second operational voltage to selected second access lines in selected second access line layers.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and relates to a memory circuit and a method for operating a three-dimensional cross-point memory array. More specifically, the invention relates to a cross-point memory device and a decoding operation in the cross-point memory device. Background technique [0002] In a three-dimensional (3D) cross-point memory array, multiple memory cells are stacked vertically on each other to increase the amount of storage in the area available for storing data. The memory cells are disposed at intersections of first access lines (eg, bit lines or word lines) and second access lines (eg, word lines or bit lines) arranged in a staggered manner. Examples of memory cells included in a 3D cross-point memory array include Magnetic Random Access Memory (MRAM), Resistive RAM (RRAM), Ferroelectric Memory (FRAM), Silicon Oxide-Nitride-Oxide Semiconductor Memory, Polymer physical memory and phase change mem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/08G11C5/02H01L27/06
CPCG11C5/02G11C16/08H01L27/0688G11C5/063G11C8/08G11C8/10G11C13/0004G11C13/0007G11C13/0023G11C13/004G11C13/0069G11C2213/71
Inventor 何信义龙翔澜
Owner MACRONIX INT CO LTD