Multi-wavelength InGaN/GaN multi-quantum well structure based on GaN dodecahedral cone and preparation method thereof

Abstract

The invention discloses a multi-wavelength InGaN/GaN multi-quantum well structure based on a GaN dodecahedral cone and a preparation method thereof. An N-surface self-supporting GaN substrate materialis corroded through hot H4PO3 to form a micro-nano GaN dodecahedral cone structure; stress in the GaN dodecahedral cone obtained through corrosion is greatly released, so that the crystal quality ofa sample can be effectively improved, the luminous efficiency can be effectively improved, and subsequent epitaxial regrowth is facilitated; and an InGaN/GaN multi-quantum well layer is grown on a GaNdodecahedral cone template by using the metal organic chemical vapor phase epitaxy technology. According to the method, different sizes of cones can be obtained by controlling the concentration of the corrosive liquid, the corrosion temperature and the corrosion time; white light emitting can be achieved by reasonably adjusting the size of the cone and the In component; and the method is a possible way for achieving single-chip fluorescent-powder-free white light emitting. The method provided by the invention does not need a patterned substrate, is low in process cost, is simple and feasible,and is suitable for large-scale preparation.

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting devices, in particular to a GaN dodecahedron-based multi-wavelength InGaN / GaN multi-quantum well structure and a preparation method thereof. Background technique [0002] Among wide-bandgap and direct-gap semiconductors, GaN-based semiconductors have the most development potential and development prospects. With their wide bandgap [0.64 eV (InN), 3.4eV (GaN), 6.2eV, (AlN)] and superior The performance (thermal stability, chemical stability and high thermal conductivity, etc.) has become a hot spot and focus in the research of optoelectronic materials and devices in recent years. On the other hand, InGaN light-emitting diodes (LEDs) can cover the entire visible wavelength range, thus attracting great attention in applications such as color displays and general lighting equipment. However, these InGaN / GaN materials still have inherent difficulties that need to be overcome before the ulti...

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Problems solved by technology

These dislocations act as non-radiative centers, causing the incoming energy to dissipate in the form of heat. Heat has a great impact on semiconductors and will reduce the working efficiency and device life of semiconductor components.

In addition, the stress distribution in the cone axis is not uniform, re

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