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Dielectric film and its preparation method

A technology of dielectric film and dielectric constant, applied in circuits, capacitors, electrical components, etc., can solve problems such as limited space for improvement, doping, etc., and achieve the effects of improving energy storage characteristics, increasing breakdown electric field, and improving leakage performance

Active Publication Date: 2021-07-09
INNER MONGOLIA UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, doping modification and control of defects only achieve the improvement of energy storage density by modifying the lattice structure, reducing the synergistic coupling effect between ferroelectric domains and reducing defects, and this situation is often at the expense of the breakdown electric field or Under the condition of polarization intensity, the energy storage density can be improved, and the improvement space is limited

Method used

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  • Dielectric film and its preparation method

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preparation example Construction

[0026] The preparation method of a double dielectric energy transfer film includes the following steps:

[0027] Step 1: Use the interface charge accumulation model to pre-screening materials, using the following formula

[0028]

[0029] Among them, ε 0 Ε 1 Ε 2 It is a vacuum dielectric constant, the dielectric constant of the raw material 1 and the dielectric constant of the raw material 2, D. 1 And D 2 The thickness of the raw material 1 and the thickness of the raw material 2, respectively, γ 1 And gamma 2 The conductivity of the raw material 1 and the electrical conductivity of the raw material 2, respectively, U respects the voltage applied to the double layer dielectric material. By this formula, the leakage charge surface density σi capable of accommodating at the interface can be calculated and the specific value is obtained.

[0030] Step 2: Selecting the energy storage performance relatively good, but the dielectric constant and the conductivity differ, which are mate...

Embodiment 1

[0038] Implement example 1NA 0.5 BI 3.25 La 1.25 Ti 4 O 15 / BABI 3.4 La 0.6 Ti 4 O 15 Double-layer dielectric index film

[0039] Using the following raw materials (whose purity is analyzed, the purity is 99.9% or more), and the interface charge accumulation model is used; NA is prepared using a hierarch and fast annealing furnace. 0.5 BI 3.25 La 1.25 Ti 4 O 15 / BABI 3.4 La 0.6 Ti 4 O 15 Double dielectric energy transfer film.

[0040] The following is a double-layer dielectric energy film Na for preparing high storage performance. 0.5 BI 3.25 La 1.25 Ti 4 O 15 / BABI 3.4 La 0.6 Ti 4 O 15 The specific steps.

[0041] 1.1): Adopt the interface charge accumulation model to bring the dielectric constant and conductivity of the original material, obtain the thickness ratio 19: 16 of the two materials, and obtain the leakage charge surface density capable of receiving the interface.

[0042] 1.2): 0.6496 g of six hydrazine nitrate, 4.5812 g of five hydrated nitrate, 0.645 g of hydroc...

Embodiment 2

[0049] Example 2NA 0.5 BI 3 La 1.5 Ti 4 O 15 / BABI 3.1 La 0.9 Ti 4 O 15 Double-layer dielectric index film

[0050] Using the following raw materials (whose purity is analyzed, the purity is 99.9% or more), and the interface charge accumulation model is used; NA is prepared using a hierarch and fast annealing furnace. 0.5 BI 3 La 1.5 Ti 4 O 15 / BABI 3.1 La 0.9 Ti 4 O 15 Double dielectric energy transfer film.

[0051] The following is a double-layer dielectric energy film Na for preparing high storage performance. 0.5 BI 3 La 1.5 Ti 4 O 15 / BABI 3.1 La 0.9 Ti 4 O 15 The specific steps.

[0052] 1.1): Adopt interface charge accumulation model, where NA 0.5 BI 3 La 1.5 Ti 4 O 15 Babi 3.1 La 0.9 Ti 4 O 15 The dielectric constant is 352 and 408, respectively, and the conductivity obtains the conductivity of different electric fields according to the formula γ = j / e, and the leakage test results are obtained from the electrical conductivity of different electric fields, and the th...

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Abstract

The present invention relates to dielectric films and methods for their preparation. The preparation method includes using the interface charge accumulation model of the first material and the second material to obtain the thickness ratio of the first material and the second material and the leakage current of the interface between the first material and the second material charge areal density; preparing a dielectric film formed of said first material and said second material of said thickness ratio. Compared with the original film, the dielectric film of the present invention effectively improves its leakage performance, reduces energy loss and increases breakdown electric field, thereby improving energy storage characteristics.

Description

Technical field [0001] The present invention relates to a dielectric film and a preparation method thereof. Background technique [0002] Dielectric energy storage devices have faster charge and discharge speed and higher power density, which can be applied to microwave communication, mixed electric vehicle distributed power system, renewable energy storage, and more. . Moreover, the dielectric energy storage film is adjustable and the ultra-high storage density, longer service life, a wider working temperature zone, and the power supply system of the green energy grid, electric energy vehicle. And provide high storage density, high power density, and high pressure thin film capacitors for advanced military technology (such as electromagnetic diluters, electromagnettes, and laser weapons, etc.). However, since the film capacitance is small, this is relatively small, in order to make it better applications in the above field, it is necessary to improve the energy storage density o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/12H01G4/33
CPCH01G4/1218H01G4/33
Inventor 赵世峰陈介煜唐哲红杨波
Owner INNER MONGOLIA UNIVERSITY
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