Transverse high-voltage power bipolar junction transistor and manufacturing method thereof

A bipolar junction, lateral high-voltage technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of insufficient withstand voltage and large leakage of lateral high-voltage power bipolar junction transistors, and achieve curvature Effect reduction, leakage capacity improvement, and the effect of reducing leakage current

Pending Publication Date: 2018-04-20
CHONGQING ZHONGKE YUXIN ELECTRONICS
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problems in the prior art, such as insufficient withstand voltage and large leakage of lateral high-voltage power bipolar junction transistors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transverse high-voltage power bipolar junction transistor and manufacturing method thereof
  • Transverse high-voltage power bipolar junction transistor and manufacturing method thereof
  • Transverse high-voltage power bipolar junction transistor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] like figure 1 and figure 2 As shown, a lateral high-voltage power bipolar junction transistor is characterized in that it includes a P-type substrate 100, an N-type buried layer 101, a P-type buried layer 102, an N-type epitaxial layer 103, and an N-type heavily doped ring region. 104, P-type isolation penetration region 105, N-type penetration region 106, P-type collector region 107, N-type heavily doped base region 108, P-type emitter region 109, pre-oxidation layer 110, field oxygen layer 111, TEOS metal Front dielectric layer 112, collector first layer metal 113, emitter first layer metal 114, base first layer metal 115, emitter second layer metal 116, collector second layer metal 117, base second layer Metal 118 and IMD planarization dielectric 119 .

[0070] The N-type buried layer 101 is located in the middle of the upper surface of the P-type substrate 100 .

[0071] The P-type buried layer 102 is located at both ends of the upper surface of the P-type subst...

Embodiment 2

[0090] like Figure 3 ~ Figure 13 As shown, a method for manufacturing a lateral high-voltage power bipolar junction transistor is characterized in that it comprises the following steps:

[0091] 1) Select a NTD single chip with less defects, with a thickness of about 500-700 μm and a resistivity of 5-30Ω·cm, marking, cleaning, and drying for later use;

[0092] 2) Growth of a thick oxide layer Temperature 1100~1150℃, time 100min~120min, dry humidification oxidation conditions.

[0093] 3) One photolithography, after photolithography etch to remove glue, grow a thin oxide layer Temperature 1000~1020℃, time 30min~40min, pure dry oxidation conditions.

[0094] The N-type buried layer 101 is implanted in the middle of the wafer substrate, and the ion implantation conditions are: dose 1e15-5e15cm -2 , Energy 40 ~ 80KeV.

[0095] The redistribution conditions are: aerobic conditions 1000 ° C, the thickness of the oxide layer is Reannealing temperature pure N 2 , 1100~1150...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a lateral high-voltage power bipolar junction transistor and a manufacturing method thereof; specifically, on the basis of a conventional lateral power bipolar junction collective transistor, a N-type annular implantation, and by optimizing the layout of all metals in the first layer, the first metal layer of the collector is completely covered on the collector area, and the size exceeds twice the junction depth of the collector area, while the emitter metal passes through hole and the second metal lead out. Theoretical analysis When the device is in the reverse withstand voltage working state, the edge of the collector junction is covered by the metal field plate, so that the curvature effect of the edge surface junction is greatly reduced when the depletion region diffuses, and the withstand voltage increases sharply, while the N-ring Adding can greatly reduce the leakage current between the collector and emitter of the device. Through the simulation and actual tape-out results, it can be concluded that the horizontal high-voltage power bipolar junction transistor of the present invention can increase BVcbo by more than 40%, BVceo by more than 40%, and the leakage capacity by an order of magnitude under the condition that other parameters have little influence.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a lateral high-voltage power bipolar junction transistor and a manufacturing method thereof. Background technique [0002] In the mid-1940s, due to the increasing complexity of electronic device systems such as navigation, communication, and weaponry, the demand for integration and miniaturization of electronic circuits became increasingly urgent. In 1959, Fairchild Semiconductor Corporation of the United States finally gathered the previous technological achievements. The first practical silicon integrated circuit was manufactured by using planar bipolar process integration technology, which created a precedent for the application and vigorous development of integrated circuits. Most widely, with the continuous advancement of integrated circuit technology, despite the huge challenge of CMOS technology, bipolar technology still develops still by virtue of its advantages in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/735H01L21/331
CPCH01L29/735H01L29/6625
Inventor 刘建刘青税国华张剑乔陈文锁张培健易前宁
Owner CHONGQING ZHONGKE YUXIN ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap