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Transverse high-voltage power bipolar junction transistor and manufacturing method thereof

A bipolar junction, lateral high-voltage technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of insufficient withstand voltage and large leakage of lateral high-voltage power bipolar junction transistors, and achieve curvature Effect reduction, leakage capacity improvement, and the effect of reducing leakage current

Pending Publication Date: 2018-04-20
CHONGQING ZHONGKE YUXIN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problems in the prior art, such as insufficient withstand voltage and large leakage of lateral high-voltage power bipolar junction transistors.

Method used

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  • Transverse high-voltage power bipolar junction transistor and manufacturing method thereof
  • Transverse high-voltage power bipolar junction transistor and manufacturing method thereof
  • Transverse high-voltage power bipolar junction transistor and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0069] like figure 1 and figure 2 As shown, a lateral high-voltage power bipolar junction transistor is characterized in that it includes a P-type substrate 100, an N-type buried layer 101, a P-type buried layer 102, an N-type epitaxial layer 103, and an N-type heavily doped ring region. 104, P-type isolation penetration region 105, N-type penetration region 106, P-type collector region 107, N-type heavily doped base region 108, P-type emitter region 109, pre-oxidation layer 110, field oxygen layer 111, TEOS metal Front dielectric layer 112, collector first layer metal 113, emitter first layer metal 114, base first layer metal 115, emitter second layer metal 116, collector second layer metal 117, base second layer Metal 118 and IMD planarization dielectric 119 .

[0070] The N-type buried layer 101 is located in the middle of the upper surface of the P-type substrate 100 .

[0071] The P-type buried layer 102 is located at both ends of the upper surface of the P-type subst...

Embodiment 2

[0090] like Figure 3 ~ Figure 13 As shown, a method for manufacturing a lateral high-voltage power bipolar junction transistor is characterized in that it comprises the following steps:

[0091] 1) Select a NTD single chip with less defects, with a thickness of about 500-700 μm and a resistivity of 5-30Ω·cm, marking, cleaning, and drying for later use;

[0092] 2) Growth of a thick oxide layer Temperature 1100~1150℃, time 100min~120min, dry humidification oxidation conditions.

[0093] 3) One photolithography, after photolithography etch to remove glue, grow a thin oxide layer Temperature 1000~1020℃, time 30min~40min, pure dry oxidation conditions.

[0094] The N-type buried layer 101 is implanted in the middle of the wafer substrate, and the ion implantation conditions are: dose 1e15-5e15cm -2 , Energy 40 ~ 80KeV.

[0095] The redistribution conditions are: aerobic conditions 1000 ° C, the thickness of the oxide layer is Reannealing temperature pure N 2 , 1100~1150...

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Abstract

The invention discloses a transverse high-voltage power bipolar junction transistor and a manufacturing method thereof. Based on a conventional transverse power bipolar junction transistor, N-type ring injection is added between all collector regions and emitter regions, the layout of all metal in a first layer is optimized to enable a first layer of metal of a collector to completely cover the collector regions, the size is more than twice the junction depth of the collector regions, and the metal of an emitter is led out via a through hole and a second layer of metal. Theoretical analysis shows that when the device is in a reverse voltage withstanding working state, as the edges of all collector junctions are covered by a metal field plate, the curvature effect of the edge curved surfacejunction is greatly reduced and the withstanding voltage is increased sharply when the depletion region is diffused, while the introduction of N ring can greatly reduce the drain current between thecollector and the emitter of the device. Simulation and the actual tape-out result show that the transverse high-voltage power bipolar junction transistor has the advantage that under the condition oflittle influence of the remaining parameters, BVcbo is improved by over 40%, BVceo is improved by over 40%, and the leakage capacity is improved by one order of magnitude.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a lateral high-voltage power bipolar junction transistor and a manufacturing method thereof. Background technique [0002] In the mid-1940s, due to the increasing complexity of electronic device systems such as navigation, communication, and weaponry, the demand for integration and miniaturization of electronic circuits became increasingly urgent. In 1959, Fairchild Semiconductor Corporation of the United States finally gathered the previous technological achievements. The first practical silicon integrated circuit was manufactured by using planar bipolar process integration technology, which created a precedent for the application and vigorous development of integrated circuits. Most widely, with the continuous advancement of integrated circuit technology, despite the huge challenge of CMOS technology, bipolar technology still develops still by virtue of its advantages in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/735H01L21/331
CPCH01L29/6625H01L29/735
Inventor 刘建刘青税国华张剑乔陈文锁张培健易前宁
Owner CHONGQING ZHONGKE YUXIN ELECTRONICS
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