A vertical high-voltage power bipolar junction transistor and its manufacturing method

A technology of bipolar junction type and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of withstand voltage, leakage and gain, frequency, and device size that are difficult to reconcile, and achieve the reduction of curvature effect , BVceo improved effect

Active Publication Date: 2020-05-05
CHONGQING ZHONGKE YUXIN ELECTRONICS
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For a single active component in a bipolar process, the designer hopes that the characteristics of the device are optimal in all aspects. The bipolar junction transistor has a series of advantages such as high gain, high current, and high frequency, but as With the continuous development of bipolar process integration technology, the disadvantages displayed are becoming more and more obvious, and the power tube can be understood as a plurality of bipolar junction transistors connected in parallel, and its withstand voltage, leakage, frequency and other characteristics are limited in the high voltage field. Especially obviously, parameters such as withstand voltage, leakage and gain, frequency, and device size are quite difficult to reconcile, so it becomes a very difficult problem for designers to comprehensively consider various factors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A vertical high-voltage power bipolar junction transistor and its manufacturing method
  • A vertical high-voltage power bipolar junction transistor and its manufacturing method
  • A vertical high-voltage power bipolar junction transistor and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] Such as figure 1 with figure 2 , A vertical high voltage power bipolar junction transistor, characterized in that it comprises a P-type substrate 100, an N-type buried layer 101, a P-type buried layer 102, an N-type epitaxial layer 103, a P-type base region 104, and a P-type isolation Through region 105, N-type through region 106, N-type heavily doped emitter region 107, N-type heavily doped ring-shaped collector region 108, pre-oxygen layer 109, field oxygen layer 110, IMD planarization dielectric 111, TEOS metal Front dielectric layer 112, base first layer metal 113, emitter first layer metal 114, collector first layer metal 115, emitter second layer metal 116, base second layer metal 117, and collector second layer Metal 118.

[0068] The N-type buried layer 101 is located in the middle of the upper surface of the P-type substrate 100.

[0069] The P-type buried layer 102 is located on two sides of the upper surface of the P-type substrate 100.

[0070] The N-type epitax...

Embodiment 2

[0088] Such as Figure 3 ~ Figure 13 As shown, a method for manufacturing a vertical high-voltage power bipolar junction transistor is characterized in that it includes the following steps:

[0089] 1) Choose NTD with fewer defects Single chip, thickness of about 500~700μm, resistivity of 5~30Ω·cm, marking, cleaning and drying for later use;

[0090] 2) Grow a thick oxide layer Temperature 1100~1150℃, time 100min~120min, dry humidification and oxidation conditions.

[0091] 3) One photolithography, after photolithography and etching, grow a thin oxide layer Temperature 1000~1020℃, time 30min~40min, pure dry oxidation conditions.

[0092] The N-type buried layer 101 is implanted in the middle of the wafer substrate, and the ion implantation conditions are: dose 1e15~5e15cm -2 , Energy 40~80KeV.

[0093] The redistribution conditions are: aerobic conditions of 1000 ℃, the thickness of the oxide layer Re-annealing temperature pure N 2 , 1100~1150℃, time 100min~120min.

[0094] 4) The s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a longitudinal high-voltage power bipolar junction transistor and a manufacturing method thereof. Based on a conventional longitudinal power bipolar junction transistor, a first layer of metal is added to all edges of a base region, so that the edge of the first layer of metal of a base completely covers the base region, and the size exceeds one to five times the junction depth of the base region; and the metal of an emitter is led out via a through hole and a second layer of metal. Theoretical analysis shows that when the device is in a reverse voltage withstanding working state, because the edge of all base region CB junctions is covered by a metal field plate, the curvature effect of the edge curved surface junction is greatly reduced when the depletion region is diffused, the BVcbo withstanding voltage increases sharply, the corresponding BVceo increases, and the forward gain does not have any loss; and the problem of compromise between gain in a longitudinal NPN transistor and BVceo withstanding voltage is solved. The transverse high-voltage power bipolar junction transistor has the advantages that under the condition that the influence of the remaining parameters is little and the gain is almost maintained unchangeable, the BVcbo is improved by over 40%, and the BVceo is improved by over 20%.

Description

Technical field [0001] The invention relates to the field of semiconductor technology, in particular to a vertical high-voltage power bipolar junction transistor and a manufacturing method thereof. Background technique [0002] In the mid-1940s, due to the increasing complexity of electronic device systems such as navigation, communications, weaponry, etc., the demand for integration and miniaturization of electronic circuits became increasingly urgent. In 1959, Fairchild Semiconductor finally gathered the technological achievements of its predecessors. The first practical silicon integrated circuit was manufactured using planar bipolar process integration technology, which created a precedent for the application and vigorous development of integrated circuits. The process of bipolar integrated circuit was the first invention in all integrated circuit processes and was also the scope of application. Most widely, with the continuous advancement of integrated circuit technology, de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/732H01L21/331
CPCH01L29/66234H01L29/732
Inventor 刘建刘青税国华张剑乔陈文锁张培健易前宁
Owner CHONGQING ZHONGKE YUXIN ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap