A vertical high-voltage power bipolar junction transistor and its manufacturing method

Abstract

The invention discloses a longitudinal high-voltage power bipolar junction transistor and a manufacturing method thereof. Based on a conventional longitudinal power bipolar junction transistor, a first layer of metal is added to all edges of a base region, so that the edge of the first layer of metal of a base completely covers the base region, and the size exceeds one to five times the junction depth of the base region; and the metal of an emitter is led out via a through hole and a second layer of metal. Theoretical analysis shows that when the device is in a reverse voltage withstanding working state, because the edge of all base region CB junctions is covered by a metal field plate, the curvature effect of the edge curved surface junction is greatly reduced when the depletion region is diffused, the BVcbo withstanding voltage increases sharply, the corresponding BVceo increases, and the forward gain does not have any loss; and the problem of compromise between gain in a longitudinal NPN transistor and BVceo withstanding voltage is solved. The transverse high-voltage power bipolar junction transistor has the advantages that under the condition that the influence of the remaining parameters is little and the gain is almost maintained unchangeable, the BVcbo is improved by over 40%, and the BVceo is improved by over 20%.

Description

Technical field [0001] The invention relates to the field of semiconductor technology, in particular to a vertical high-voltage power bipolar junction transistor and a manufacturing method thereof. Background technique [0002] In the mid-1940s, due to the increasing complexity of electronic device systems such as navigation, communications, weaponry, etc., the demand for integration and miniaturization of electronic circuits became increasingly urgent. In 1959, Fairchild Semiconductor finally gathered the technological achievements of its predecessors. The first practical silicon integrated circuit was manufactured using planar bipolar process integration technology, which created a precedent for the application and vigorous development of integrated circuits. The process of bipolar integrated circuit was the first invention in all integrated circuit processes and was also the scope of application. Most widely, with the continuous advancement of integrated circuit technology, de...

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Problems solved by technology

For a single active component in a bipolar process, the designer hopes that the characteristics of the device are optimal in all aspects. The bipolar junction transistor has a series of advantages such as high gain, high current, and high frequency, but as With the continuous development of bipolar process integration technology, the disadvantages displayed are becoming more and more obvious, and the power tube can be understood as a plurality of bipolar junction transistors connected in parallel, and its withstand voltage, leakage, frequency and other characteristics are limited in the high voltage field. Especially obviously, parameters such as withstand voltage, leakage and gain, frequency, and device size are quite difficult to reconcile, so it becomes a very difficult problem for designers to comprehensively consider various factors

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