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A vertical high-voltage bipolar junction transistor and its manufacturing method

A bipolar junction and transistor technology, which is applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as difficulty in reconciling parameters such as withstand voltage and gain, frequency, and device size of bipolar junction devices. , to achieve the effect of simple and feasible structure

Active Publication Date: 2020-02-14
CHONGQING ZHONGKE YUXIN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For a single active component in a bipolar process, the designer hopes that the characteristics of the device are optimal in all aspects. The bipolar junction transistor has a series of advantages such as high gain, high current, and high frequency, but as With the continuous development of bipolar process integration technology, the disadvantages displayed are becoming more and more obvious, especially in the high-voltage field. The withstand voltage and gain, frequency, device size and other parameters of bipolar junction devices are quite difficult to reconcile. Therefore, comprehensive Considering the various factors becomes a very difficult problem for the designer

Method used

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  • A vertical high-voltage bipolar junction transistor and its manufacturing method
  • A vertical high-voltage bipolar junction transistor and its manufacturing method
  • A vertical high-voltage bipolar junction transistor and its manufacturing method

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Embodiment 1

[0059] A vertical high voltage bipolar junction transistor is characterized by comprising a P-type substrate 100, an N-type buried layer 101, a P-type buried layer 102, an N-type epitaxial layer 103, an N-type heavily doped emitter region 104, a P-type Isolation penetration region 105, N-type through region 106, P-type base region 107, N-type heavily doped collector region 108, pre-oxide layer 109, field oxide layer 110, TEOS metal front dielectric layer 111, emitter metal 112, Collector metal 114 and base metal 113.

[0060] The N-type buried layer 101 is located at the center of the upper surface of the P-type substrate 100 .

[0061] The P-type buried layer 102 is located at both ends of the upper surface of the P-type substrate 100 .

[0062] The N-type epitaxial layer 103 is located on the N-type buried layer 101 , and the N-type epitaxial layer 103 is in contact with the P-type substrate 100 , the N-type buried layer 101 and the P-type buried layer 102 .

[0063] The P...

Embodiment 2

[0075] like Figure 3 to Figure 11 As shown, a method for manufacturing a vertical high-voltage bipolar junction transistor is characterized by comprising the following steps:

[0076] 1) Select the NTD single wafer with fewer defects, the thickness of the wafer is about 500-700μm, the resistivity is 5-30Ω·cm, marking, cleaning and drying are used;

[0077] 2) grow a thick oxide layer Temperature 1100 ~ 1150 ℃, time 100min ~ 120min, dry humidification oxidation conditions.

[0078] 3) One photolithography, after photolithography is removed, a thin oxide layer is grown Temperature 1000~1020℃, time 30min~40min, pure dry oxidation conditions.

[0079] The N-type buried layer 101 is implanted in the middle of the wafer substrate, and the ion implantation conditions are: dose 1e15~5e15cm -2 , Energy 40 ~ 80KeV.

[0080] The redistribution conditions are: aerobic conditions of 1000 °C, and the thickness of the oxide layer is Re-annealing temperature is pure N2, 1100~1150℃, ...

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Abstract

The invention discloses a longitudinal high-voltage bipolar junction type transistor and a manufacturing method therefor. Specifically, on the basis of a conventional longitudinal bipolar junction type transistor, a first layer of metal is added to the edge of a base region on one side tightly close to a collector to enable the edge of the first layer metal of a base electrode to cover the base region, wherein the dimension is larger than the junction depth of the base region by one to five times; and emitting electrode metal is led out from one side far from the collector. Theoretical analysis proves that when the device is in a reverse voltage withstand working state, the edge of the base region CB junction on one side tightly close to the collector is covered with a metal field plate, so that the curvature effect of the edge curved surface junction is greatly lowered when a depletion region is diffusion, and BVcbo voltage withstand is increased sharply, so that the corresponding BVceo is increased, and positive gain has no any loss; the problem existing in compromising between gain in a longitudinal NP tube and the BVceo voltage withstand can be well solved; and in the condition of low influence to other parameters and basically unchanged gain of the transverse high-voltage bipolar junction type transistor, the BVcbo is improved by greater than 20%, and the BVceo is improved by greater than 10%.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing process, in particular to a vertical high-voltage bipolar junction transistor and a manufacturing method thereof. Background technique [0002] In the mid-1940s, due to the increasing complexity of electronic device systems such as navigation, communication, and weaponry, the need for integration and miniaturization of electronic circuits became increasingly urgent. In 1959, Fairchild Semiconductor finally gathered the technical achievements of its predecessor, The first practical silicon integrated circuit was manufactured by using the planar bipolar process integration technology, which created a precedent for the application and vigorous development of integrated circuits. The most extensive, with the continuous progress of integrated circuit technology, despite the huge challenges of CMOS technology, bipolar technology still develops due to its advantages in high speed, high transc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/40H01L21/331H01L29/73H01L29/732
CPCH01L29/402H01L29/66265H01L29/7317H01L29/7322
Inventor 刘建刘青税国华张剑乔陈文锁张培健易前宁
Owner CHONGQING ZHONGKE YUXIN ELECTRONICS
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