Ultra-wide band strong electromagnetic field protection device

An ultra-broadband, protective device technology, applied in the fields of magnetic/electric field shielding, electrical components, antennas, etc., can solve the problems of HPM leakage, limited protective bandwidth, etc., and achieve a widened operating bandwidth, low insertion loss, and increased adjustability. Effect

Active Publication Date: 2020-02-11
SHANXI UNIV
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem of HPM leakage due to the limited protection bandwidth of the current active frequency selective surface and energy selective surface, the present in

Method used

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  • Ultra-wide band strong electromagnetic field protection device
  • Ultra-wide band strong electromagnetic field protection device
  • Ultra-wide band strong electromagnetic field protection device

Examples

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Example Embodiment

[0026] A device capable of realizing strong electromagnetic field protection in an ultra-wide frequency band, comprising an active frequency selective surface 1, an upper dielectric substrate 2, a lower dielectric substrate 3, and a bandpass frequency selective surface 4;

[0027] The active frequency selective surface 1 is printed on the upper surface of the upper dielectric substrate 2; the bandpass frequency selective surface 4 is printed on the lower surface of the lower dielectric substrate 3; the space between the upper dielectric substrate 2 and the lower dielectric substrate 3 is air layer; the axis of the active frequency selective surface 1, the axis of the upper dielectric substrate 2, the axis of the lower dielectric substrate 3, and the axis of the bandpass frequency selective surface 4 coincide;

[0028] The active frequency selection surface 1 is composed of M×M units, each unit is a square metal patch 5 , and a square annular slot 6 is etched on the square metal...

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Abstract

The invention relates to an ultra-wide band strong electromagnetic field protection device, and relates to the field of space strong electromagnetic field protection. The ultra-wide band strong electromagnetic field protection device comprises an active frequency selection surface, a two-layer medium substrate and a band-pass frequency selection surface. The active frequency selection surface is printed on the upper surface of the upper dielectric substrate. The band-pass frequency selection surface is printed on the lower surface of the lower dielectric substrate. An air layer is arranged between the two dielectric substrates. The unit structure of the active frequency selection surface is a metal patch etched with a square annular gap and four circular arc-shaped gaps. The four edges ofthe square annular gap are crossed with switching diodes, and three rectangular patches arranged at equal distances are loaded on the circular arc-shaped gaps. The unit structure of the band-pass frequency selection surface is similar to that of the active frequency selective surface, except that the sizes of the square annular gap and the circular arc-shaped gaps are different from that of the latter. The problem that the current protection device has limited protection bandwidth and causes high-power signal leakage can be solved.

Description

technical field [0001] The invention is used in the field of space strong electromagnetic field protection, and in particular relates to an ultra-wideband strong electromagnetic field protection device. Background technique [0002] As the high-power microwave weapon (HPMW) technology has matured, the strong electromagnetic pulse generated by HPMW can be coupled into electronic systems such as radar and communication through antennas, thereby causing irreversible damage to electronic equipment. Therefore, it is of great significance to study the protection strategy of electronic equipment under strong field conditions. [0003] Generally speaking, there are two main space protection measures for high-power microwave (HPM). The first is an active frequency selective surface, which consists of a frequency selective surface, a semiconductor device with switching characteristics, and a bias circuit. By controlling the on-off of semiconductor devices, active frequency selective ...

Claims

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Application Information

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IPC IPC(8): H01Q15/00H05K9/00
CPCH01Q15/0026H05K9/0086H05K9/0088
Inventor 张文梅秦冬梅张丽红杨荣草贾鹤萍梁美彦
Owner SHANXI UNIV
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