Display substrate and manufacturing method thereof and display device
A technology for a display substrate and a manufacturing method, which is applied to electrical components, electrical solid-state devices, circuits, etc., can solve the problems that affect the display quality of the display substrate, the film layer difference of the display substrate is large, and the anode is difficult to connect to the drain. Optimize the connection state, reduce the film layer difference, and improve the effect of the overlapping situation
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[0052] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.
[0053] The top-gate TFT (thin film transistor) has the characteristics of a short channel, so its on-state current Ion can be effectively increased, and when it is applied to a display substrate, it can significantly improve the display effect of the display substrate and effectively reduce the power consumption of the display substrate. Moreover, the overlapping area of the gate and the source and drain of the top-gate TFT is small, so the parasitic capacitance generated is small, so the possibility of defects such as GDS (gate and source-drain short circuit) is also reduced. Since the top-gate TFT has the above-mentioned remarkable advantages, it has attracted more and more attention.
[0054] In recent years, due to the advantages...
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