A method for preparing a double-sided alignment mark of a transparent semiconductor material

Abstract

The invention discloses a method for preparing a double-sided alignment mark of a transparent semiconductor material. The preparation method comprises the following steps: determining the laser incident position on the front of the transparent semiconductor material sample according to the marking process parameters input by the user; A laser mark is formed inside the semiconductor material sample; an alignment mark is formed on the back of the transparent semiconductor material sample according to the laser mark. The preparation method of the double-sided alignment mark of the transparent semiconductor material provided by the embodiment of the present invention is to form a laser mark inside the transparent semiconductor material, and form an alignment mark on the back of the sample according to the laser mark. Therefore, the preparation method does not need to form an alignment mark on the surface of the sample. Etching marks ensure the integrity of the front side of the sample to the greatest extent, without causing damage to the device structure in the sample, avoiding the influence of surface damage on the distribution of devices in the sample, and improving the performance and reliability of the sample.

Description

technical field [0001] The invention relates to the technical field of semiconductor power device preparation, in particular to a method for preparing alignment marks on both sides of a transparent semiconductor material. Background technique [0002] In recent years, the third generation of transparent semiconductor materials - wide bandgap transparent semiconductor materials, has become a new driving force for the development of today's electronics industry. Wide bandgap transparent semiconductor materials have the characteristics of high thermal conductivity, high electron saturation velocity, high breakdown voltage, and low dielectric constant, which theoretically guarantee their wide application range. For example, they can be used in SiC and GaN and other power electronic devices. [0003] In the process of preparing such electronic power devices, the photolithography process directly determines the feature size of large-scale integrated circuits, which is a key proce...

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Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides a method for preparing a double-sided alignment mark of a transparent semiconductor material, so as to solve the problem of easily causing damage to the surface of the substrate material and affecting the Distribution of Devices on a Circle

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