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A kind of leakage test method of nand type flash memory

A test method and memory technology, applied in static memory, instruments, etc., can solve problems such as errors, lower reliability of Nand-type flash memory, and inability to maintain data for a long time, so as to achieve the effect of improving reliability

Active Publication Date: 2021-08-03
GIGADEVICE SEMICON (BEIJING) INC +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the high-voltage tube has a leakage condition, the data in the storage unit cannot be kept for a long time, and errors may occur when the storage unit is read, written or erased, thereby reducing the reliability of the Nand-type flash memory

Method used

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  • A kind of leakage test method of nand type flash memory
  • A kind of leakage test method of nand type flash memory
  • A kind of leakage test method of nand type flash memory

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Embodiment Construction

[0026] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only some structures related to the present invention are shown in the drawings but not all structures.

[0027] figure 1 It is a schematic structural diagram of a Nand type flash memory provided by an embodiment of the present invention, figure 2 It is a flow chart of a leakage test method of a Nand type flash memory provided exemplarily, such as figure 1 As shown, the Nand type flash memory includes a storage unit 10 and a sense amplifier 20, the sense amplifier 20 includes a high voltage tube Tg and a precharge capacitor C, and the first end of the high voltage tube Tg is electrically connected to the first end o...

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Abstract

The invention discloses a leakage test method of a Nand flash memory. The Nand type flash memory includes a storage unit and a sense amplifier, the first end of the high voltage tube of the sense amplifier is electrically connected to the first end of the precharge capacitor, the second end of the high voltage tube and the first end of the storage unit are connected to the bit The second end of the precharge capacitor is connected to the ground, and the second end of the storage unit is electrically connected to the source line. The leakage test method of the Nand flash memory includes: comparing the stable voltage of the first end of the high voltage tube with the reference voltage in the erasing verification stage of the Nand type flash memory; judging whether the high voltage tube leaks electricity according to the comparison result. The invention carries out the leakage test of the high-voltage tube through the multiplexing erasure verification process, so that the voltage difference loaded at both ends of the high-voltage tube is relatively large, and the leakage of the high-voltage tube in the sense amplifier can be effectively detected, thereby improving the performance of the Nand type flash memory reliability.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of Nand type flash memory, in particular to a leakage test method of Nand type flash memory. Background technique [0002] Nand type flash memory is a kind of non-volatile memory. It stores data by reading, writing and erasing storage cells. It has the advantages of fast rewriting speed and large storage capacity, and is widely used in electronic products. With the extensive use of Nand-type flash memory, the requirements for its reliability are constantly increasing. [0003] When the Nand flash memory is working, the state of the high voltage tube in the sense amplifier directly affects the reliability of the Nand flash memory. When the high-voltage tube has a leakage condition, the data in the storage unit cannot be kept for a long time, and errors may occur when the storage unit is read, written or erased, thereby reducing the reliability of the Nand flash memory. Contents of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/50
CPCG11C29/50G11C2029/5004
Inventor 洪杰马思博
Owner GIGADEVICE SEMICON (BEIJING) INC
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