Method and structure for improving semiconductor device NBTI
A semiconductor and device technology, applied in the field of improving semiconductor strain device NBTI, can solve problems such as negative bias temperature instability
Pending Publication Date: 2020-03-06
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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Problems solved by technology
[0005] The invention provides a method and structure for improving NBTI of semiconductor strain devices, which can solve the problem of negative bias temperature instability in semiconductor devices in the related art
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[0043] The technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0044] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, or i...
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The present invention relates to the technical field of semiconductor device manufacturing, and in particular, to a method and structure for improving semiconductor strain device NBTI. The method includes: providing a substrate and a device formed on the substrate; depositing an oxide film layer on the device; depositing a molecular plug film structure on the oxide film layer, the molecular plug film structure including at least one molecular plug film; depositing a stress film on the molecular plug film structure; performing an annealing process to increase the stress applied to the device bythe stress film. The structure includes: a substrate and a device formed on the substrate; an oxide film layer formed on the device; a molecular plug film structure formed on the oxide film layer andincluding at least one molecular plug film; and a stress film formed on the molecular plug film structure. By depositing the molecular plug film structure between the oxide film layer and the stressfilm, the negative bias temperature instability of a semiconductor device in the prior art can be solved.
Description
technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method and structure for improving NBTI of a semiconductor strain device. Background technique [0002] In recent years, straining technology has attracted much attention due to its excellent performance in improving the performance of Complementary Metal Oxide Semiconductor (CMOS) devices. Especially for thin film technology below 90 nanometers (nm), many methods have been introduced to improve the electric mobility of carriers. [0003] For example, in the related art, for P-type metal oxide semiconductor (Positive Channel Metal Oxide Semiconductor, PMOS) devices, a stress film is usually deposited on the surface of the substrate, and the compressive stress film is used to increase the compressive stress to increase the mobility of the holes in the PMOS device; For N-type metal oxide semiconductor (Negative Channel MetalOxide Semiconductor, NMOS) d...
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IPC IPC(8): H01L21/336H01L29/06H01L29/78
CPCH01L29/66553H01L29/7843H01L29/0649
Inventor 李润领张彦伟
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD