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Method and apparatus for treating substrate

A substrate processing method and technology of a substrate processing device are applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effects of improving substrate processing efficiency, increasing etching speed, and reducing flow rate

Active Publication Date: 2020-03-10
SEMES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, phosphoric acid heated above 175°C causes problems in supply piping

Method used

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  • Method and apparatus for treating substrate
  • Method and apparatus for treating substrate
  • Method and apparatus for treating substrate

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Embodiment Construction

[0044] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various ways, and it should be construed that the scope of the present invention is not limited by the following embodiments. This embodiment is provided for a more complete description by those skilled in the art. Therefore, the shapes of elements in the drawings are exaggerated to emphasize clearer illustrations.

[0045] figure 1 is a plan view schematically showing the substrate processing apparatus 1 of the present invention.

[0046] refer to figure 1 , the substrate processing equipment 1 includes an indexing module 1000 and a process processing module 2000 . The indexing module 1000 includes a loading port 1200 and a transfer frame 1400 . The loading port 1200, the transfer frame 1400 and the processing module 2000 are arranged in a row in sequence. Hereinafter, the direc...

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Abstract

The invention provides a method for treating a substrate. In one embodiment, the method includes the steps of: rotating the substrate; and forming a liquid film by supplying a process fluid to the upper surface of the substrate, wherein during the rotation of the substrate, the thickness of the liquid film on the substrate is adjusted to the set thickness.

Description

technical field [0001] The invention relates to a substrate processing device and a substrate processing method. Background technique [0002] In the manufacturing process of semiconductor devices, liquid crystal display devices, etc., wet etching is performed by supplying a high-temperature phosphoric acid aqueous solution as an etchant to the front surface (front surface) of a substrate on which a silicon nitride film and a silicon oxide film are formed. Instead, the silicon nitride film is selectively removed. [0003] The higher the temperature of the supplied phosphoric acid aqueous solution, the higher the etching rate. However, phosphoric acid heated above 175°C causes problems in supply piping. Contents of the invention [0004] The problem to be solved by the invention [0005] An object of the present invention is to provide a processing method and apparatus capable of improving substrate processing efficiency. [0006] Furthermore, an object of the present i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311H01L21/67
CPCH01L21/31111H01L21/6708H01L21/30604H01L21/02282H01L21/324H01L21/6715H01L21/68764H01L21/67051H01L21/67103
Inventor 李映一朴贵秀吴承勋崔重奉金大勋方炳善
Owner SEMES CO LTD