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Forming Method of Semiconductor Structure

A semiconductor, gate structure technology, applied in the field of formation with fin field effect transistor structure, which can solve the problem of increasing the complexity of processing and manufacturing integrated circuits

Inactive Publication Date: 2020-04-03
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] This miniaturization also increases the complexity of processing and manufacturing integrated circuits, and similar developments in integrated circuit processing and manufacturing are required to achieve these advances

Method used

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  • Forming Method of Semiconductor Structure
  • Forming Method of Semiconductor Structure
  • Forming Method of Semiconductor Structure

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Embodiment Construction

[0048] The present disclosure relates to field-effect transistors (FETs), such as fin-like field effect transistors (FinFETs), and methods of manufacturing the same. In detail, embodiments of the present disclosure provide FinFETs with reduced parasitic capacitance between source / drain (S / D) contacts and metal gates.

[0049] The following content provides many different embodiments or examples to realize different features of the embodiments of the present invention. Specific examples of components and configurations are described below to simplify embodiments of the invention. Of course, these are just examples, not intended to limit the embodiments of the present invention. For example, in the following description, it is mentioned that the first part is formed on or on the second part, which may include the embodiment in which the first part and the second part are formed in direct contact, and may also include the first part. An embodiment in which an additional part is...

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PUM

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Abstract

A forming method of a semiconductor structure, the semiconductor device and a manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin disposed over a substrate, wherein the semiconductor fin includes a channel region and a source / drain region; a gate structure disposed over the channel region of the semiconductor fin, wherein the gate structure includes a gate spacer and a gate stack; a source / drain structure disposed over the source / drain region of the semiconductor fin; and a fin top hard mask vertically interposed between the gate spacer and the semiconductor fin, wherein the fin top hard mask includes a dielectric layer, and wherein a sidewall of the fin top hard mask directly contacts the gate stack, and another sidewall of the fin top hard mask directly contacts the source / drain structure.

Description

technical field [0001] Embodiments of the present invention relate to a method for forming a semiconductor device, and in particular to a method for forming a fin field effect transistor structure. Background technique [0002] The integrated circuit industry has experienced exponential growth. Technological advances in integrated circuit materials and design have produced several generations of integrated circuits, each with smaller and more complex circuits than the previous generation. During the evolution of integrated circuits, functional density (ie, the number of interconnected devices per chip area) has increased, while geometry size (ie, the smallest element (or line) that can be produced using a fabrication process) has decreased. This miniaturization process typically provides benefits by increasing production efficiency and reducing associated costs. [0003] This miniaturization also increases the complexity of handling and manufacturing integrated circuits, a...

Claims

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Application Information

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IPC IPC(8): H01L29/41H01L29/423H01L21/336H01L29/78
CPCH01L29/785H01L29/66795H01L29/41H01L29/4232H01L29/66545H01L29/6656H01L29/7848H01L29/165H01L21/3081H01L29/7851H01L29/518H01L29/0847H01L21/31116H01L27/0886H01L21/823431
Inventor 杨哲育杨凯杰蔡庆威程冠伦
Owner TAIWAN SEMICON MFG CO LTD