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Semiconductor device

A semiconductor, regional technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as unsatisfactory transistors

Inactive Publication Date: 2020-04-03
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, existing Tunneling Field Effect Transistors are not satisfactory in every respect

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

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Embodiment Construction

[0135] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are only examples, not limitations. For example, in the following description, forming a first feature on or over a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which the first and second features may be formed on or over the second feature. An embodiment in which additional features are formed between features such that a first feature and a second feature may not be in direct contact. In addition, the present disclosure may repeat reference numerals and / or words in various embodiments. This repetition is for the purposes of simplicity and clarity and does not in itself represent a relationship between the va...

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Abstract

A semiconductor device includes first and second source / drain regions, a core channel region, a barrier layer, a shell, and a gate stack. The core channel region is between the first and second source / drain regions and is doped with first dopants. The barrier layer is between the core channel region and the second source / drain region and is doped with second dopants. The shell is over the core channel region and the barrier layer. The gate stack is over the shell.

Description

technical field [0001] The present disclosure relates to semiconductor devices and methods of manufacturing the same. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth over the past few decades. Technological advances in semiconductor materials and design have produced ever smaller and more complex circuits. These semiconductor material and design advances have been made possible because the technologies associated with processing and manufacturing have also undergone technological advancements. In the course of semiconductor evolution, the number of interconnect devices per unit area has increased as the size of the smallest component that can be reliably produced decreases. [0003] However, many challenges also increase as the size of the smallest components decreases. As features get closer together, leakage currents become more pronounced, signals can cross more easily, and power usage becomes a significant conce...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/10H01L29/06H01L21/336
CPCH01L29/78H01L29/1033H01L29/0603H01L29/66477H01L29/7391H01L29/42376H01L29/66356B82Y10/00H01L29/0676H01L29/0646H01L29/0649H01L29/4983H01L29/205H01L29/165H01L29/775H01L29/1054H01L29/66439
Inventor 雅利安·阿弗萨蓝
Owner TAIWAN SEMICON MFG CO LTD