Narrow-linewidth vertical-cavity surface-emitting semiconductor laser based on lateral grating

A vertical cavity surface emission, semiconductor technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of narrowing the laser linewidth, reducing the cold cavity linewidth, etc., to achieve narrow laser linewidth, low preparation cost, The effect of low power consumption

Active Publication Date: 2020-04-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

The effective cavity length of the traditional VCSEL is very short, only about one wavelength, while the extended cavity length can be 2-3 wavelengths long, due to the cold cavity length Δυ c =Tc/n g 2L c , so extending the effective cavity length of the resonant cavity can reduce the linewidth of the cold cavity, an

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  • Narrow-linewidth vertical-cavity surface-emitting semiconductor laser based on lateral grating
  • Narrow-linewidth vertical-cavity surface-emitting semiconductor laser based on lateral grating
  • Narrow-linewidth vertical-cavity surface-emitting semiconductor laser based on lateral grating

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Embodiment Construction

[0033] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0034] The VCSEL based on the lateral grating of the present invention allows the light field to oscillate back and forth in the resonant cavity while passing through the lateral grating around the active region to perform diffraction feedback on the light leaked to the lateral grating in the active region, through Reasonably change the composition, thickness, and logarithm of the grating material to achieve the selection of a specific wavelength and narrow the linewidth.

[0035] Specifically, the present invention discloses a nitrogen-based lateral grating extended cavity length narrow line width vertical cavity surface emitting semiconductor laser, including:

[0036] Highly doped substrate;

[0037] A resonant cavity...

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Abstract

A vertical-cavity surface-emitting semiconductor laser is disclosed. The vertical-cavity surface-emitting semiconductor laser comprises: a highly doped substrate; the resonant cavity which is positioned on the front surface of the highly-doped substrate and is used for selecting a mode and expanding the cavity length; a lateral optical grating which surrounds the resonant cavity and is used for carrying out diffraction feedback on light leaked to the lateral optical grating from the active region of the resonant cavity so as to narrow the line width; a contact layer located on the lateral grating; and metal electrodes including a bottom metal electrode and a top metal electrode, wherein the bottom metal electrode is located on the back of the highly doped substrate, and the top metal electrode is located on the contact layer. The laser is simple in structure, small in size, low in preparation cost, low in power consumption and narrower in laser line width.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a vertical cavity surface-emitting semiconductor laser with extended cavity length and narrow line width based on a lateral grating. Background technique [0002] Narrow linewidth vertical cavity surface emitting lasers are widely used in coherent communication, sensing, spectroscopy and precision measurement and other technical fields. With the continuous advancement of science and technology, people have increasingly stringent requirements on the performance of core light sources. For example, atomic clocks used in navigation systems must require light sources to have narrower linewidths (1-10MHz) in order to be compatible with natural atomic linewidths (such as Cesium atom is 5MHz) compatible, thereby reducing the noise floor of the sensor to improve the performance of the sensing system. Most laser cooling and trapping experiments use external cavity diode laser...

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Application Information

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IPC IPC(8): H01S5/12H01S5/125H01S5/183
CPCH01S5/1237H01S5/125H01S5/183
Inventor 赵秦丰于文琦李健刘建国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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