Novel dual-band efficient class F power amplifier

Abstract

The invention discloses a novel dual-band efficient class F power amplifier. A transistor source electrode is grounded, a grid electrode is connected with an RC stabilizing circuit, and a drain electrode is connected with a novel harmonic control circuit; the RC stabilizing circuit is connected with a dual-band input matching circuit and as dual-band gate DC bias circuit. The novel harmonic control circuit is connected with a low-frequency-band harmonic adjusting circuit, and the low-frequency-band harmonic adjusting circuit is connected with a low-frequency-band harmonic control circuit, a dual-band output matching circuit and a dual-band drain electrode direct-current biasing circuit with a harmonic control function. According to the invention, the problem of working efficiency deterioration caused by over-high circuit complexity and transistor parasitic parameter effect in the prior art is overcome; on the premise of meeting dual-band transmission, a circuit structure is effectivelysimplified, and meanwhile, the parasitic parameter effect of a transistor is considered, so that the purpose of improving the power amplifier efficiency is achieved.

Description

technical field [0001] The invention belongs to the technical field of power amplifiers, in particular to a novel dual-band high-efficiency Class F power amplifier. Background technique [0002] At present, with the further development of the mobile communication system, a radio frequency front-end covering multiple standards and multiple frequency bands will become a key component of future communication terminals. As the most critical and energy-consuming module in the RF front-end, the power amplifier also needs to have the ability to work in multiple standards and multiple frequency bands. Therefore, the design of high-efficiency multi-band power amplifiers has become a hot spot in the field of power amplifier research, and high-efficiency dual-band power amplifiers are one of the most basic types. [0003] Class F power amplifier is one of the high-efficiency power amplifiers. Its harmonic control circuit can adjust the even-order harmonic impedance of the signal to a ...

AI Technical Summary

Problems solved by technology

[0012] A new type of dual-band high-efficiency Class F power amplifier overcomes the problem of deterioration of work efficiency caused by the high circuit complexity of the existing technology and the existence of transistor parasitic parameter effects; on the premise of satisfying dual-band transmission, the circuit structure is effectively simplified, and at the same time The effect of parasitic parameters of the transistor is considered, so as to achieve the purpose of improving the efficiency of the power amplifier

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