Novel dual-band efficient class F power amplifier

A power amplifier, dual-band technology, used in amplifiers, amplifiers with semiconductor devices/discharge tubes, electrical components, etc., can solve problems such as the deterioration of complexity and work efficiency, and achieve simplification of structural complexity, improvement of work efficiency, and simplification of The effect of the circuit structure

Pending Publication Date: 2020-04-07
TIANJIN UNIV MARINE TECH RES INST
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] A new type of dual-band high-efficiency Class F power amplifier overcomes the problem of deterioration of work efficiency caused by the high circuit complexity of the existing technology and the existence of transistor parasitic parameter effects; on the p

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel dual-band efficient class F power amplifier
  • Novel dual-band efficient class F power amplifier
  • Novel dual-band efficient class F power amplifier

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0024] In order to illustrate the technical solution of the present invention more clearly, the present invention will be further described below with reference to the accompanying drawings and embodiments. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work.

[0025] The present invention provides a novel dual-band high-efficiency class F power amplifier, and its functional block diagram is as follows figure 1 As shown, the input end of the transistor is composed of a dual-band gate DC bias circuit and a dual-band input matching circuit; the output end of the transistor is composed of a new type of harmonic control circuit, a low-band harmonic adjustment circuit, a low-band harmonic control circuit, and a dual-band Band-drain DC bias circuit and dual-band output matching circuit.

[0026] figure 2 Shown is the low-band fundamental wave f 1 , High frequency fundamental wave f 2 The circuit structure diagram of the d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a novel dual-band efficient class F power amplifier. A transistor source electrode is grounded, a grid electrode is connected with an RC stabilizing circuit, and a drain electrode is connected with a novel harmonic control circuit; the RC stabilizing circuit is connected with a dual-band input matching circuit and as dual-band gate DC bias circuit. The novel harmonic control circuit is connected with a low-frequency-band harmonic adjusting circuit, and the low-frequency-band harmonic adjusting circuit is connected with a low-frequency-band harmonic control circuit, a dual-band output matching circuit and a dual-band drain electrode direct-current biasing circuit with a harmonic control function. According to the invention, the problem of working efficiency deterioration caused by over-high circuit complexity and transistor parasitic parameter effect in the prior art is overcome; on the premise of meeting dual-band transmission, a circuit structure is effectivelysimplified, and meanwhile, the parasitic parameter effect of a transistor is considered, so that the purpose of improving the power amplifier efficiency is achieved.

Description

technical field [0001] The invention belongs to the technical field of power amplifiers, in particular to a novel dual-band high-efficiency Class F power amplifier. Background technique [0002] At present, with the further development of the mobile communication system, a radio frequency front-end covering multiple standards and multiple frequency bands will become a key component of future communication terminals. As the most critical and energy-consuming module in the RF front-end, the power amplifier also needs to have the ability to work in multiple standards and multiple frequency bands. Therefore, the design of high-efficiency multi-band power amplifiers has become a hot spot in the field of power amplifier research, and high-efficiency dual-band power amplifiers are one of the most basic types. [0003] Class F power amplifier is one of the high-efficiency power amplifiers. Its harmonic control circuit can adjust the even-order harmonic impedance of the signal to a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03F3/217
CPCH03F3/217
Inventor 马建国邹浩周绍华张蕾赵升杨自凯杨闯李旭光李昭张明哲
Owner TIANJIN UNIV MARINE TECH RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products