Substrate post-processing device and method

Abstract

The invention relates to the technical field of chemical mechanical polishing post-processing, and discloses a substrate post-processing device and method, and the device comprises a bearing unit forrotating a substrate, a supply unit for spraying fluid to the substrate, a fluid collection unit, and an annular baffle assembly. The baffle assembly is arranged around the bearing unit, and the distance between the inner wall of the baffle assembly and the edge of the substrate is set to enable fluid splashed to the inner wall of the baffle assembly from the substrate not to be splashed back to the surface of the substrate. Therefore, secondary pollution caused by the fact that fluid flying from the surface of the substrate is splashed back to contaminate the substrate again is avoided, and the cleaning effect is improved.

Description

technical field

[0001] The invention relates to the technical field of chemical mechanical polishing post-processing, in particular to a substrate post-processing device and method. Background technique

[0002] Chemical Mechanical Planarization (CMP) is a globally planarized ultra-precision surface processing technology. Since a large number of chemical reagents and abrasives used in chemical mechanical polishing will cause contamination of the substrate surface, a post-treatment process needs to be introduced after chemical mechanical polishing. The post-treatment process generally consists of cleaning and drying to provide a smooth and clean substrate surface.

[0003] In the usual post-treatment process, wet cleaning is more commonly used. On the one hand, it uses mechanical action to remove the pollutants on the substrate surface and enters the cleaning solution. On the other hand, it uses the cleaning solution to chemically react with the pollutants on the substrate su...

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