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A kind of method for preparing avalanche photodiode and avalanche photodiode

An avalanche photoelectric and diode technology, which is applied to circuits, electrical components, semiconductor devices, etc., can solve problems such as carrier blocking

Active Publication Date: 2020-12-29
新磊半导体科技(苏州)股份有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing an avalanche photodiode and an avalanche photodiode to solve the problem of reducing the loading at the interface of high-bandgap / low-bandgap materials of the avalanche photodiode. The problem of flow blockage effect

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  • A kind of method for preparing avalanche photodiode and avalanche photodiode

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[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0031] In the InP / InAlAs / InGaAs split absorption multiplied avalanche photodiode, for the first type of heterojunction interface formed by InAlAs / InGaAs, when carriers are transported from the low-bandgap InGaAs material layer to the high-bandgap InAlAs material layer , the high-bandgap material will act as a potential barrier to hinder the movement of carriers, so carrier aggregation will be formed at the interface, which will seriously affect the high-frequency re...

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Abstract

The invention provides a method for preparing an avalanche photodiode and the avalanche photodiode, and relates to the technical field of semiconductors. The method comprises: depositing and growing an N<+>-InP layer, an N<+>-InAlAs layer, an InAlAs multiplication layer and a first sub-charge layer on an InP substrate; setting the target temperature of the aluminum source furnace as a first targettemperature, and depositing and growing a second sub-charge layer by using the aluminum source furnace while the aluminum source furnace starts to cool; raising the temperature of the gallium sourcefurnace to a second temperature; setting the target temperature of the gallium source furnace as a second target temperature, and depositing and growing a first sub-absorption layer by using the gallium source furnace while the gallium source furnace starts to cool; and after the gallium source furnace is cooled to a second target temperature, depositing and growing a second sub-absorption layer by utilizing the gallium source furnace. A part of a P-InAlAs charge layer grows while an aluminum source furnace is cooled, a part of an InGaAs absorption layer grows while a gallium source furnace iscooled, an interface formed by the two parts provides smooth transition for carrier transportation, and the blocking effect of carriers is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing an avalanche photodiode and the avalanche photodiode. Background technique [0002] Avalanche photodiodes (APDs) are essential detection devices for optical fiber communication systems. The continuous development of APD devices is accompanied by the development of detectors with different structures and materials. InAlAs (indium aluminum arsenic) APD will be the latest photodetector for 10G or higher bandwidth applications because of its larger gain-bandwidth product, lower excess noise, smaller dark current and better reliability. [0003] In the InP / InAlAs / InGaAs separation absorption multiplication avalanche photodiode, photons are absorbed by the low-bandgap InGaAs layer to generate photo-generated carriers, and the carriers are transported to the high-bandgap InAlAs layer to generate a multiplication effect. This material combination reduces th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/107
CPCH01L31/1075H01L31/1844
Inventor 冯巍谢小刚郭帅
Owner 新磊半导体科技(苏州)股份有限公司
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