A short-circuit protection device for gan power switching devices

Abstract

The invention discloses a short-circuit protection device for a GaN power switching device, which belongs to the field of power electronics. The device includes a short-circuit state detection module, a signal processing module, and a drive module; the short-circuit state detection module includes a coupled inductance sampling circuit and a comparison circuit; the GaN power switching device is located on a PCB board, using PCB traces or external copper foil A coupled inductance is formed to sense the current passing through the GaN power switching device; the coupled inductance sampling circuit includes a primary side circuit and a secondary side circuit, and the primary side circuit includes a device under test and a primary side inductance, wherein the primary side inductance is composed of The parasitic stray inductance of the PCB trace or the external copper foil is generated, and the secondary inductance is generated by the inductance of the coupling coil. The invention adopts the inductive coupling method to realize the sampling of the short-circuit current, has lower loss and higher integration, and realizes fast short-circuit protection for the power switch device under the condition of reducing the complexity of the circuit topology as much as possible.

Description

technical field [0001] The invention belongs to the field of power electronics, and more specifically relates to a short-circuit protection device for GaN power switching devices. Background technique [0002] In the face of higher rated power and wider application requirements, Gallium Nitride (GaN) has become a promising next-generation power switch. Gallium Nitride High Electron Mobility Transistor (Gallium Nitride High Electron Mobility Transistor, GaN HEMT) is a semiconductor power device based on GaN material. Under the same withstand voltage conditions, compared with silicon-based MOSFETs, it mainly has the advantages of low conduction resistance, high current density, fast switching speed and high power density. These features of GaN HEMT make it more in line with future development requirements, so it has very broad prospects and markets. As the market demand for such products continues to increase, the related issues of GaN power switching devices are being exten...

AI Technical Summary

Problems solved by technology

[0009] In view of the defects of the prior art, the purpose of the present invention is to provide a short-circuit protection device for GaN power switching devices, which aims to solve the technical problems of high short-circuit protection loss and slow protection response speed of existing high-frequency power electronic switching devices

Images