Transistor with adjustable performance

Abstract

The invention discloses a transistor with adjustable performance, which comprises a source electrode, a drain electrode and a gate region, wherein the gate region comprises a back electrode, a gate dielectric layer, a channel layer, a ferroelectric material layer and an upper electrode from bottom to top; the left side and the right side of the channel layer are connected to the source electrode and the drain electrode respectively; the upper electrode and the source electrode are isolated through an isolation dielectric layer; the upper electrode and the drain electrode are isolated through an isolation dielectric layer; the upper electrode comprises M isolation layers, and the isolation layers divide the upper electrode into M+1 regions; and different voltages are applied to different regions of the upper electrode, so that the channel layers corresponding to different regions of the ferroelectric material layer have different band gaps. According to the transistor with the adjustable performance provided by the invention, band gap adjustment is carried out on different regions in the channel layer through segmented polarization control, so that the channel layers in the different regions have different band gaps, and multiple controllable states of the whole transistor are realized.

Description

technical field [0001] The invention relates to the field of transistors, in particular to a transistor with adjustable performance. Background technique [0002] Thin-film transistors can be used in many fields and can meet many purposes. From small-sized flexible low-cost displays to large-sized, high-resolution, high-speed displays, thin-film transistors are inseparable. Thin film transistors rely on the control of the current by the semiconductor channel layer, the semiconductor channel layer is located between the source and the drain, the gate dielectric layer is between the semiconductor layer and the gate, through the gate dielectric layer and the semiconductor channel layer The capacitive injection of carriers near the interface controls the output current, the so-called field effect. [0003] Two-dimensional materials such as graphene are the most well-known two-dimensional materials since this century. Its excellent electrical, optical, and mechanical properties ...

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Problems solved by technology

However, graphene has no band gap and is a conductor, so its application in semiconductor integrated circuits is limited

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