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Photoelectric detector and preparation method thereof

A photodetector and electrode technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of large deviation in the size of photodetectors, and achieve the effect of facilitating subsequent process operations and reducing height differences

Inactive Publication Date: 2020-04-17
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a photodetector and its preparation method to solve the problem that the size of the photodetector existing in the existing technology has a large deviation, so that the photodetector can realize large-scale device manufacturing

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  • Photoelectric detector and preparation method thereof
  • Photoelectric detector and preparation method thereof
  • Photoelectric detector and preparation method thereof

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preparation example Construction

[0044] The preparation method of traditional photodetector comprises the following steps:

[0045] Step S11: See Figure 1a , providing a silicon substrate 10, an insulating layer 11, a metal interconnection layer 12 and a cathode layer 13 are formed on the silicon substrate 10, the metal interconnection layer 12 is embedded in the insulating layer 11, and the The cathode layer 13 at least covers the metal interconnection layer 12;

[0046] Step S12: See Figure 1b , depositing an electron transport layer 21, a quantum dot layer 22, a hole transport layer 23, an anode layer 24 and a patterned photoresist layer 30 in sequence on the silicon substrate 10, and the electron transport layer 21 covers the insulating Layer 11 and anode 13, wherein the patterned photoresist layer 30 covers the anode layer 24 directly above the cathode layer 13, and the quantum dot layer 22 uses a quantum dot material, such as a lead compound;

[0047] Step S13: See Figure 1c , using the patterned...

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Abstract

The invention provides a photoelectric detector and a preparation method thereof. The photoelectric detector comprises a semiconductor substrate, an insulating layer and an electrode structure, and afirst electrode is formed on the semiconductor substrate. The insulating layer covers the surface of the semiconductor substrate and the surface of the first electrode layer, the insulating layer is provided with a groove, and the groove penetrates through the insulating layer and exposes the first electrode layer; and the groove is filled with the electrode structure. The groove is filled with the electrode structure so that the height difference of the electrode structure in each photoelectric detector is reduced, and subsequent technological operation is facilitated.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a photodetector and a preparation method thereof. Background technique [0002] Photodetectors are currently important optoelectronic components in the optoelectronic information industry, and are often used in sensing, detection and imaging. At present, traditional photodetector materials such as Si, Ge and InGaAs have disadvantages such as complex preparation process and high cost. Researchers have begun to use quantum dot materials to prepare high-performance photodetectors, and their performance can exceed that of traditional photodetectors currently on the market. more than an order of magnitude. [0003] Quantum dot is a new type of nano-optoelectronic material. Since its particle size is several to tens of nanometers, which is smaller than the Bohr radius of the material itself, electrons will be subject to three-dimensional confinement effects when moving insid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/08H01L31/18
CPCH01L31/022408H01L31/08H01L31/18Y02P70/50
Inventor 武青青朱建军胡少坚
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT