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GaN Schottky diode

A Schottky diode and diode technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of diode warpage, reduce parasitic capacitance, and be difficult to operate, so as to improve operability and increase operating frequency. , Reduce the effect of chip warpage

Pending Publication Date: 2020-04-21
北京国联万众半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

By reducing the substrate thickness of the diode, the parasitic capacitance of the diode can be greatly reduced, but when the substrate thickness of the diode is reduced to 2 to 3 microns, the diode is prone to warping and is not easy to handle

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  • GaN Schottky diode
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Embodiment Construction

[0017] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0018] Many specific details are set forth in the following description to facilitate a full understanding of the present invention, but the present invention can also be implemented in other ways different from those described herein, and those skilled in the art can do so without departing from the connotation of the present invention. Similar promotion, therefore, the present invention is not limited by the specific embodiments dis...

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Abstract

The invention discloses a GaN Schottky diode, and relates to the technical field of Schottky diodes. The diode comprises a GaN Schottky diode body, the diode body comprises a semi-insulating GaN substrate, a metal pattern is formed on a back surface of the semi-insulating GaN substrate, and the metal pattern does not cover the back surface of the whole substrate. A working frequency of the GaN Schottky diode is improved, an existing working frequency can be broken through and the working frequency can reach 500 GHz, operability of the diode is improved, warping of a chip is weakened, and the GaN Schottky diode can be effectively prevented from being damaged in a manufacturing process.

Description

technical field [0001] The present invention relates to the technical field of Schottky diodes, in particular to a GaN Schottky diode. Background technique [0002] Terahertz waves refer to electromagnetic waves with frequencies in the range of 100GHz-10THz. At the low end of terahertz frequencies, a terahertz frequency multiplication source can be realized based on Schottky diodes. At present, GaAs-based Schottky diodes are commonly used, but because of their breakdown resistance characteristics, GaAs-based Schottky diodes are not as good as GaN Schottky diodes with wider band gaps. Terahertz sources have become a potentially valuable technology. At present, the mobility of GaN Schottky diodes is not very high due to the inherent reasons of current GaN materials, so it is difficult to reduce its series resistance. In order to make the GaN Schottky diode work better in the terahertz frequency band, the performance of the diode can be improved by reducing its parasitic capa...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/872H01L29/66143H01L29/0603H01L29/0684
Inventor 刘育青安国雨李少鹏张志国
Owner 北京国联万众半导体科技有限公司
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