A scanning probe processing method for micro-nano structures derived from graphene edges

Abstract

The invention discloses a micro-nano structure scanning probe processing method originating from the graphene edge, which is applied in the field of graphene micro-nano processing, aiming at the high reliability, high stability and low cost of future flexible devices that cannot be fully satisfied by the existing technology Extreme processing requirements; the present invention selects a probe with strong surface chemical activity as a processing tool, and carries out marking processing from the graphene edge to the inside according to the set processing track, and utilizes the probe and graphene edge carbon atoms in the marking processing process The tribochemical reaction between them removes the carbon atoms in the contact area under a low contact pressure lower than the mechanical destructive strength of the graphene, and the mechanical and electrical properties of the micro-nano structure processed by the method of the present invention are consistent with the graphene matrix.

Description

technical field [0001] The invention belongs to the field of micro-nano processing, in particular to a graphene micro-nano processing technology. Background technique [0002] Nanotechnology has created a new era of human life in the 21st century, and technology based on integrated circuits has prompted human beings to enter the information age of rapid development. However, with the development over the years, the development of silicon-based integrated circuit technology has approached the physical limit of its characteristic line width, and it is urgent to find alternative materials for silicon and develop new flexible nano-devices. Two-dimensional materials represented by graphene show great potential for manufacturing future electronic devices with their excellent mechanical and electrical properties. Therefore, exploring new two-dimensional material processing technologies and increasing relevant technical reserves is a national strategy to keep up with international d...

AI Technical Summary

Problems solved by technology

The top-down processing method has many steps, it is difficult to directly process a specific nanostructure, and the processing parameters are not easy to control; H-plasma etching generally expands the processing area into a regular hexagon, and it is difficult to set flexible processing according to specific needs path; the bottom-up processing method inevitably introduces chemical impurities, which will directly affect the electrical properties of the processed structure

Therefore, the current technical reserves in this field cannot fully meet the extreme processing requirements for future flexible devices with high reliability, high stability and low cost.

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