Vacuum high-low temperature semiconductor device test probe station

Abstract

The invention provides a vacuum high-low temperature semiconductor device test probe station, which relates to the technical field of semiconductor devices. The vacuum high-low temperature semiconductor device test probe station comprises a workbench body, a protective cover, a probe rod and a probe head, wherein moving mechanisms are fixedly connected to the two ends of the top surface of the workbench body, each moving mechanism comprises a moving box, and micro motors are fixedly connected to the side surfaces, away from each other, of the two moving boxes. According to the vacuum high-lowtemperature semiconductor device test probe station provided by the invention, as a clamping mechanism is arranged, the advantages of convenience in replacement and use is achieved, and the problems that a probe is troublesome to replace when an existing vacuum high-low temperature semiconductor device test probe station is used for replacing the probe and the replacement efficiency is low can besolved; and as a buffer mechanism is arranged, the conditions that the surface of the wafer is easily stabbed, the testing of the wafer is further influenced, the tested result cannot be accurate andthe normal judgment of the wafer is influenced when the wafer is tested are effectively avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a vacuum high and low temperature semiconductor device testing probe station. Background technique [0002] Semiconductor devices usually use different semiconductor materials, different processes and geometric structures, and have developed a variety of crystal diodes with different functions and uses. The frequency coverage of crystal diodes can range from low frequency to high frequency. , microwave, millimeter wave, infrared until light wave, three-terminal devices are generally active devices, typical representatives are various transistors (also known as transistors). [0003] The existing vacuum high and low temperature semiconductor device test probe station is cumbersome to replace the probe, and the replacement efficiency is low, and when the probe is used to test the wafer, the surface of the wafer is easily scratched, which further affects the quality of...

AI Technical Summary

Problems solved by technology

[0003] The existing vacuum high and low temperature semiconductor device test probe station is cumbersome to replace the probe, and the replacement efficiency is low, and when the probe is used to test the wafer, the surface of the wafer is easily scratched, which further affects the quality of the wafer. The test results cannot be accurate, which affects the normal judgment of the wafer. Therefore, we propose a vacuum high and low temperature semiconductor device test probe station to solve the above problems

Images