Wafer horizontal deviation detection method, detection device and furnace tube equipment

A technology of horizontal deviation and detection method, applied in coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of poor uniformity of wafer film thickness and scratches, and achieve the effect of avoiding scratches

Active Publication Date: 2020-04-24
HUA HONG SEMICON WUXI LTD
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a wafer level deviation detection method, detection device and furnace tube equipment, which can solve the

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer horizontal deviation detection method, detection device and furnace tube equipment
  • Wafer horizontal deviation detection method, detection device and furnace tube equipment
  • Wafer horizontal deviation detection method, detection device and furnace tube equipment

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0049] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0050] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the pointed device or element must have a specific orientation or a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of semiconductor manufacturing, and in particular relates to a wafer horizontal deviation detection method, a wafer horizontal deviation detection device and furnace tube equipment. The detection method comprises the steps of determining an excircle area of a reference wafer; calculating the minimum circumscribed rectangle of the excircle area of the reference wafer; determining a tangent point between the minimum circumscribed rectangle and the excircle area of the reference wafer; transferring the wafer to be measured to the outer circle area of the reference wafer; controlling a ray to enter from one side of the tangent point along the vertical direction; and judging whether the ray is received at the other side of the tangent point or not. The detection device comprises a CPU, a program storage part, a memory and a data bus, wherein the CPU, the program storage part and the memory are respectively connected with the data bus. A program is stored in the program storage part and is used for executing the detection method. The furnace tube equipment comprises a ray receiving and transmitting system, a wafer boat, a moving device, a moving driving system and a detection device. According to the invention, the offset vector of the wafer to be detected in the horizontal direction is detected through the ray, and the horizontal offset vector can be corrected in time according to the offset vector.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a furnace tube wafer level deviation detection method, a furnace tube wafer level deviation detection device and furnace tube equipment for detecting the wafer level deviation. Background technique [0002] The semiconductor manufacturing process is mainly to perform multiple photolithography processes, etching processes, and film forming processes, etc., to form semiconductor devices with various structures on the semiconductor wafer, and many of the processes must be carried out by furnace tube equipment. Taking the thermal oxygen method as an example, the reaction gas is first passed into the high-temperature furnace tube, so that the reaction gas undergoes a chemical reaction in the reaction chamber of the furnace tube equipment, and a thin film is deposited on the surface of the wafer, and then the wafer is removed from the reaction chamber. Take it out, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/67H01L21/68C23C16/44
CPCH01L21/67265H01L21/681C23C16/44
Inventor 张召金新
Owner HUA HONG SEMICON WUXI LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products