Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Surface acoustic wave device

A surface acoustic wave and device technology, applied in electrical components, impedance networks, etc., can solve problems such as reduced durability of SAW devices

Pending Publication Date: 2020-05-01
HUAWEI TECH CO LTD
View PDF8 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the transmit power increases, the durability of SAW devices decreases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface acoustic wave device
  • Surface acoustic wave device
  • Surface acoustic wave device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] In the 5G new air interface spectrum, 1-6GHz provides a good mix of coverage and capacity for 5G services, while the 3.3-3.8GHz frequency band provides a solid foundation for 5G initial commercial services. The 3.4-3.6GHz band in particular drives the economies of scale needed for low-cost devices. In order to operate in the 3.4-3.6GHz range (f 0 =3.5GHz,BW 3db =200MHz, the relative bandwidth is 5.7%) to obtain a wideband SAW filter for 5G service deployment, it is necessary to adopt a high electromechanical coupling coefficient k 2 (for example, k 2 >17%) piezoelectric structure. Although some ScAlN / diamond multilayer structures can exhibit sufficient electromechanical coupling (e.g., k 2 >17%), but the coupling coefficient of this structure generally decreases with the increase of the metal electrode thickness, so the degree of electromechanical coupling is low in practical applications. Although the ScAlN / diamond structure is superior to traditional SAW filters ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A surface acoustic wave (SAW) device including a piezoelectric layer, a high acoustic velocity layer coupled to the piezoelectric layer, and at least one transducer. The SAW device may include a multi-layer graphene layer in the electrodes of at least one of the transducer and in a conductive layer that is coupled to the piezoelectric layer.

Description

[0001] Related Applications Cross Application [0002] This application claims priority to US Patent Application Serial No. 15 / 713,117, entitled "A Surface Acoustic Wave Device," filed September 22, 2017, the contents of which are incorporated herein by reference. technical field [0003] The invention relates to a surface acoustic wave (surface acoustic wave, SAW) device. In various examples, the present invention relates to any or all of SAW filters, resonators, and duplexers with improved electromechanical coupling and higher power durability. Background technique [0004] In communication systems (terminal and base station infrastructure), surface acoustic wave (surface acoustic wave, SAW) filters and resonators are widely used. For next-generation 5G new radio (new radio, NR) wireless communication, there is an increasing demand for at least one of higher operating frequency, lower insertion loss, higher transmit power, and larger channel bandwidth. Novel piezoelectri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03H9/145H03H3/08
CPCH03H9/14538H03H9/02574H03H9/02582H03H9/14541H03H3/08H03H9/02834H03H9/64H03H9/145
Inventor 陈卓辉
Owner HUAWEI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com