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Semiconductor structure

A semiconductor and gate structure technology, applied in the field of semiconductor structures, can solve problems such as unbearable, incomplete equipment and circuits, poor noise immunity, etc.

Inactive Publication Date: 2020-05-08
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the reduced Vt in this case, a power switching HEMT driven by a HEMT-based driver will have poor noise immunity because the power switching HEMT cannot withstand large feedback-on pulses to its gate (back- feed-through impulse) voltage
Therefore, existing devices and circuits containing multiple transistors are not fully compliant

Method used

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  • Semiconductor structure
  • Semiconductor structure
  • Semiconductor structure

Examples

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Embodiment Construction

[0012] The following disclosure describes various exemplary embodiments for implementing different features of the subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description, the formation of a first feature over or on a second feature may include embodiments in which the first feature is formed in direct contact with the second feature, and may also include that additional features may be described in An embodiment is formed between a feature and a second feature such that the first feature and the second feature may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and / or letters in various instances. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed. ...

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Abstract

Apparatus and circuits including transistors with different threshold voltages and methods of fabricating the same are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an active layer that is formed over the substrate and comprises a plurality of active portions; a polarization modulation layer comprising a plurality of polarization modulation portions each of which is disposed on a corresponding one of the plurality of active portions; and a plurality of transistors each of which comprises a source region, a drain region, and a gate structure formed on a corresponding one of the plurality of polarization modulation portions. The transistors have at least three different threshold voltages.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor structure. Background technique [0002] In an integrated circuit (integrated circuit, IC), an enhancement-mode N-type transistor, such as an enhancement-mode high-electron-mobility transistor (E-HEMT), can be used as a pull-up device (pull- up device) to minimize quiescent current. In order to achieve near full-rail pull-up voltage and fast slew rate, a considerable over-drive voltage is required for N-type enhancement transistors. That is, the voltage difference (Vgs) between the gate and the source should be much larger than the threshold voltage (Vt), ie (Vgs-Vt>>0). It is imperative to use multilevel E-HEMT based drivers for integrated circuits to minimize quiescent current. Nevertheless, multi-stage E-HEMT based drivers will not There will be enough overdrive voltage (especially for the last stage driver). Although the Vt of the pull-up E-HEMT transistor and the Vf of the d...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L29/06H01L21/8232
CPCH01L27/0207H01L29/0684H01L21/8232H01L21/8252H01L27/085H01L27/0883H01L29/2003H01L27/0605H01L21/82345H01L29/7786H01L29/41766H03K17/6871H01L29/432H01L29/66462
Inventor 陈建宏
Owner TAIWAN SEMICON MFG CO LTD
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