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A rapid preparation method of ink, a preparation method of thin film and a preparation method of oxide thin film transistor
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A technology for oxide thin films and transistors, applied in the manufacturing of inks, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of time-consuming and long-term water bath treatment
Active Publication Date: 2021-07-30
SHANGHAI UNIV
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Although the cost of this method is low, it requires a long time of water bath treatment, which takes a long time
Method used
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[0029] The present invention provides a rapid preparation method of ink, including the steps of:
[0030] Mix the metal salt raw material, an organic solvent, and a stabilizer to obtain a raw material mixture; the organic solvent is an alcohol ether solvent or an alcohol solvent;
[0031] The ultrasonic varicker is immersed in the raw material mixture, and the ultrasonic treatment is from 5 to 20 minutes to give ink.
[0032] The present invention first mixes a metal salt material, an organic solvent, and a stabilizer to obtain a raw material mixture; the organic solvent is an alcohol ether solvent or an alcohol solvent.
[0033] In the present invention, the metal salt feedstock is preferably a metal salt required to prepare an active layer or an insulating layer of a thin film transistor, more preferably a metal salt required to prepare an active layer or an insulating layer of an oxide thin film transistor; The metal salt is preferably a soluble metal salt; the ink is preferabl...
Embodiment 1
[0063] Next, the preparation of the oxide thin film transistor active layer precursor solution (ink) and an active layer (film) provided by the oxide thin film transistor provided by the present invention is further illustrated by the preparation of the oxide-thiramond tin oxide, and the present invention:
[0064] Penthal tetrachloride, zinc tin, dihydrate, and pentachloride was added to ethylene glycol methyl ether by molar ratio of 0.301: 0.689: 0.01 to obtain a metal salt solution having a total metal ion concentration of 0.3 mol / L. Ethanolamine is added to the metal salt solution to obtain a raw material mixture, wherein the total amount of metal ions and the moles of ethanolamine are 1: 2;
[0065] The ultrasonic gallophotol is immersed in the raw material mixture, the raw material mixture does not have the vibrating end of the ultrasonic hike, the bottom end of the vibrating end of the ultrasonic gallion and the bottom of the raw material mixed solution are 10 mm, and the...
Embodiment 2
[0071] The material of the deposition of the deposition source and drain, the source and the drain of the source, and the drain of the drain obtained in Example 1 were aluminum to obtain an oxide thin film transistor.
[0072] Test the transfer characteristic curve of the oxide thin film transistor obtained by the present embodiment, as a result, figure 2 Indicated.
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Abstract
The invention provides a rapid preparation method of ink, a preparation method of a thin film and a preparation method of an oxide thin film transistor, belonging to the technical field of thin film transistors. The rapid preparation method of ink provided by the present invention comprises the following steps: mixing metal salt raw materials, organic solvents and stabilizers to obtain a raw material mixture; the organic solvent is an alcohol ether solvent or an alcohol solvent; Immerse in the mixed solution of raw materials, and ultrasonically treat for 5-20 minutes to obtain the ink. The invention uses an ultrasonic horn for ultrasonic treatment, which can complete the alcoholysis reaction of the metal salt raw material in a short time at room temperature, greatly shortens the preparation time of the ink, improves the preparation efficiency of the ink, and overcomes the high temperature and long time of the water bath method. The disadvantage of time is that after the ink prepared by the present invention is prepared into a film, its performance is equivalent to or better than that of the film obtained by the water bath method. In addition, the preparation method provided by the invention has simple process, easy operation and is suitable for industrial application.
Description
Technical field [0001] The present invention relates to the field of thin film transistors, and more particularly to a rapid preparation method of ink, a method of preparing a film and a method of preparing an oxide thin film transistor. Background technique [0002] In recent years, thin film transistors serve as liquid crystal display and active driven switching devices, high optical transmittance, high mobility, and good stability and uniformity, with a unique advantage of high optical transmittance, high mobility and good stability and uniformity. Received extensive attention. [0003] The thin film transistor is composed of a multilayer film, and the film properties prepared by different preparation methods are different, so the process of selecting a film prepared on the device plays a key effect on the performance of the device. Among them, the preparation method of the film is mainly divided into two categories. The method based on vacuum equipment is: magnetron sputterin...
Claims
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Application Information
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