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Transistor structure and manufacturing method thereof

A manufacturing method and transistor technology, which are used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve the effect of improving breakdown voltage

Active Publication Date: 2020-05-19
NUVOTON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, how to further improve the breakdown voltage of high-voltage transistor devices is the current problem

Method used

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  • Transistor structure and manufacturing method thereof
  • Transistor structure and manufacturing method thereof
  • Transistor structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] figure 1 A cross-sectional view of a transistor structure according to an embodiment of the present invention is shown.

[0049] Please refer to figure 1 The transistor structure 100 may be a high voltage transistor, such as a lateral diffused metal-oxide-semiconductor transistor (LDMOS transistor). In addition, the laterally diffused metal oxide semiconductor transistor may be a laterally diffused N-type metal oxide semiconductor (LDNMOS) transistor or a laterally diffused P-type metal oxide semiconductor (LDPMOS) transistor.

[0050] Hereinafter, the first conductivity type and the second conductivity type described are different conductivity types, and the first conductivity type and the second conductivity type may be one and the other of the N-type conductivity type and the P-type conductivity type, respectively.

[0051] In this embodiment, the transistor structure 100 is a depletion-mode (D-mode) LDNMOS transistor as an example, the first conductivity type is a...

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Abstract

The invention provides a transistor structure, which comprises a substrate, an epitaxial layer, a well region, a high-voltage well region, a source region, a drain region, a gate structure and a firstburied layer. The epitaxial layer has a first conductivity type and is disposed on the substrate. The well region has a second conductive type and is located in the epitaxial layer. The high-voltagewell region has a first conductivity type and is located in the epitaxial layer on one side of the well region. The source region has a first conductive type and is located in the well region. The drain region has a first conductivity type and is located in the high-voltage well region. The gate structure is disposed on the epitaxial layer between the source region and the drain region. The firstburied layer has a second conductive type and is located in the substrate under the high-voltage well region. The thickness of at least one part of the first buried layer is gradually reduced in the direction of the first buried layer far away from the well region. A method of manufacturing the transistor structure is also provided.

Description

technical field [0001] The present invention relates to a semiconductor structure and a method of fabricating the same, and more particularly, to a transistor structure and a method of fabricating the same. Background technique [0002] In an integrated circuit device, different circuits require close cooperation of different circuit devices with different underlying operating characteristics. Among them, the high-voltage transistor device, as its name implies, is a transistor device that can withstand higher bias voltage, which means that the breakdown voltage of the high-voltage transistor device is higher than that of the general transistor device. [0003] However, how to further improve the breakdown voltage of high-voltage transistor devices is a current challenge. SUMMARY OF THE INVENTION [0004] The present invention provides a transistor structure that can have a higher breakdown voltage. [0005] The present invention provides a method of fabricating a transis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/06
CPCH01L29/7816H01L29/66681H01L29/0611
Inventor 邓筱璇潘钦寒
Owner NUVOTON