Variable voltage SiC MOSFET active driving circuit

Abstract

The invention discloses a variable-voltage SiC MOSFET active driving circuit, and the circuit comprises a driving circuit, a voltage sampling circuit, a pulse generation circuit and a source voltage circuit; the voltage sampling circuit is used for collecting voltage signals at the two ends of a gate source electrode in the switching process of the SiC MOSFET and transmitting the voltage signals to the pulse generation circuit. The pulse generation circuit is used for generating a pulse signal according to the received voltage signal and transmitting the pulse signal to the source voltage circuit; and the source voltage circuit is used for outputting a driving voltage control signal to the SiC MOSFET according to the pulse signal. The circuit has the advantages that the current change ratein the switching process of the SiC MOSFET can be suppressed by changing the driving voltage of the SiC MOSFET, and the phenomena of current and voltage overshoot and oscillation in the switching process of a device are suppressed under the condition of sacrificing relatively small switching loss.

Description

technical field [0001] The invention relates to a variable voltage SiC MOSFET active drive circuit, which belongs to the technical field of power electronics. Background technique [0002] Compared with silicon metal oxide semiconductor field effect transistor (Si MOSFET), silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET) has higher operating temperature, higher thermal conductivity and lower switching loss, so It is widely used in the fields of car chargers, motors and photovoltaic inverters, but too high switching speed will cause current and voltage overshoot and oscillation during the switching process of the device, and even increase the switching loss of the device. In order to promote the application of SiC MOSFET , the problem needs to be resolved. [0003] There are currently several ways to solve this problem. On the one hand, the SiC MOSFET can be driven by a resonant drive circuit, which can effectively reduce the switching loss of ...

AI Technical Summary

Problems solved by technology

On the one hand, the SiC MOSFET can be driven by a resonant drive circuit, which can effectively reduce the switching loss of the device, but it cannot solve the problems of current, voltage overshoot and oscillation during the switching process of the device

On the other hand, by increasing the resistance value of the device drive circuit, the current, voltage overshoot and oscillation problems during the switching process of the device can be reduced, but the switching loss of the device will be increased

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