Preparation method of quantum dots

A technology of quantum dots and anions, applied in the field of quantum dots, can solve problems such as poor quality and lattice dislocation of quantum dots

Pending Publication Date: 2020-06-05
TCL CORPORATION
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a method for preparing quantum dots, which aims to solve the problem of lattice dislocation in the prepared quantum dots due to the inability to achieve uniform doping in the prior art. Defective and poor quality issues

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of quantum dots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The present invention provides a method for preparing quantum dots. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0013] see figure 1 , the present invention provides a flow chart of a preferred embodiment of a quantum dot preparation method, wherein, as shown in the figure, it includes steps:

[0014] S100, providing a composite material, the composite material comprising PAMAM dendrimers and metal ions bound in the cavity of the PAMAM dendrimers;

[0015] S200, modifying the terminal functional groups of the PAMAM dendrimer in the composite material, so that the amine group in the PAMAM dendrimer is converted into an oil-soluble group, and an oil-soluble composite material is obtained;

[00...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a quantum dot, and the preparation method of the quantum dots comprises the following steps: providing a composite material which comprises a PAMAM dendrimer and metal ions combined in a cavity of the PAMAM dendrimer; carrying out modification treatment on a PAMAM dendrimer end functional group in the composite material to convert an amino group in the PAMAM dendrimer into an oil-soluble group so as to obtain an oil-soluble composite material; and adding the oil-soluble composite material into a quantum dot growth reaction system, and mixing to obtain the quantum dots. According to the method, the metal ions can be uniformly doped into the quantum dots, the quantum dots which are not subjected to lattice dislocation and are good in quality are prepared, and the uniform doping of the metal ions can effectively improve the energy level width of the quantum dots so as to change the absorption spectrum and the luminescence spectrum of the quantum dots.

Description

technical field [0001] The invention relates to the field of quantum dots, in particular to a method for preparing quantum dots. Background technique [0002] The preparation of quantum dot nanocrystals can effectively improve the energy band width of quantum dots, thereby changing the absorption and luminescence spectra of quantum dots. In the prior art, the methods for preparing quantum dot nanocrystals are basically prepared by the oil phase method. Among them, doping The elemental precursors are organometallic precursors. [0003] However, the use of organometallic precursors as doping element precursors cannot effectively control the uniformity of doping, which will cause lattice dislocation of quantum dots and affect the quality of quantum dot nanocrystals, so the existing technology needs to be improved. Contents of the invention [0004] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a method for pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02
CPCC09K11/025
Inventor 程陆玲杨一行
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap