104 results about "Luminescence spectra" patented technology

The invention belongs to the technical field of OLEDs, and provides a polycyclic compound containing triphenyl silicon and a polyalkyl substituent group and an organic electroluminescent device containing the polycyclic compound. The structural general formula of the polycyclic compound is as shown in formula I in the specification. Benzofuran with higher electronegativity is introduced to a ring structure composed of nitrogen atoms and boron atoms, triphenyl silicon is introduced to the para-position of boron, and the synergistic effect of benzofuran and triphenyl silicon can significantly enhance the multiple resonance of a light-emitting core and reduce vibration relaxation. Due to simultaneous use of the benzofuran and the triphenyl silicon, the problems of vibration relaxation increase, spectrum widening and the like caused by introduction of the polyalkyl substituent are remarkably improved, the luminous efficiency of the material is remarkably improved, and the color purity is improved, so that the requirement of BT.2020 wide color gamut display standard on a luminescent spectrum is met. I

To provide a technique with which a thermoplastic polymer foamed particle itself is made identifiable, and a thermoplastic polymer foamed particle molded body is made identifiable without damaging its beautiful appearance by making it composed of identifiable thermoplastic polymer foamed particles.SOLUTION: Thermoplastic polymer foamed particles 100 exhibit a light emission reaction derived from a light-emitting rare-earth element 10 through irradiation with electromagnetic waves. A molded body thereof is formed through in-mold molding of the foamed particles and thereby exhibits a light emission reaction. An identification method therefor comprises: (i) a step for irradiating the surfaces of the foamed particles or the molded body with electromagnetic waves; and (ii) a step for detecting a light emission reaction derived from a light-emitting rare-earth element through electromagnetic wave irradiation by using a detection device, so as to obtain a light emission spectrum. A first identification method further comprises a step for observing contrast between the light emission spectrum and a blank spectrum in which the light emission reaction derived from the light-emitting rare-earth element is not exhibited. A second identification method further comprises a step for comparing the light emission spectrum with a preset standard light emission spectrum in which the light emission reaction derived from the light-emitting rare-earth element is exhibited.SELECTED DRAWING: Figure 1

An object of one embodiment of the present invention is to provide a multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance, a separation layer containing a substance having a hole-transport property and a substance having an electron-transport property, and a second light-emitting layer containing two kinds of organic compounds that form an exciplex and a substance that can convert triplet excitation energy into luminescence. Note that a light-emitting element in which light emitted from the first light-emitting layer has an emission spectrum peak on the shorter wavelength side than an emission spectrum peak of the second light-emitting layer is more effective.

The invention discloses a femtosecond pulse laser modulation-based GaN-based micro light-emitting diode test system, which comprises a femtosecond pulse laser excitation module, a first detection light path, a to-be-tested GaN-based micro light-emitting diode, a photovoltage detection and bias control module, a photoluminescence detection module and a control module, the control module is configured to control the excitation power and the external bias voltage of the femtosecond pulse laser excitation module, and synchronously collect a photoluminescence spectrum signal and a photovoltage signal; according to the excitation power, the external bias voltage, the photoluminescence spectrum signal and the photovoltage signal, the competition relation between carrier drift extraction and local radiation recombination under different bias electric field conditions is obtained, and therefore an experimental basis is provided for structural design and working bias optimization of the GaN-based micro light-emitting diode device to be tested.

The invention relates to the field of nano photonics and optical materials, in particular to an exciton state energy level detection method based on a plasmon enhanced nonlinear spectrum, which comprises the following steps: constructing a mixed nano cavity structure in which a single-layer two-dimensional material is coupled with a plasmon cavity; collecting a two-photon photoluminescence spectrum, a second harmonic spectrum and a third harmonic spectrum of the single-layer two-dimensional material in the mixed nanocavity structure; the intensity of a nonlinear optical signal is improved through a local enhancement effect of plasmons; according to the two-photon photoluminescence spectrum, the second harmonic spectrum and the third harmonic spectrum of the single-layer two-dimensional material, the dark exciton state energy level, the bright state energy level, the dark exciton state energy level and the high-energy exciton state energy level of the single-layer two-dimensional material are determined. According to the method, the energy level of the Rydberg exciton state of the semiconductor material with the nanoscale thickness can be accurately detected.

The invention provides a seven-membered ring-containing boron-nitrogen compound and application thereof, the seven-membered ring-containing boron-nitrogen compound has a structure as shown in formula I. According to the boron-nitrogen compound disclosed by the invention, through extension conjugation and introduction of nitrogen atoms, not only is fine adjustment of a spectrum realized, but also the luminous efficiency is further improved. The boron-nitrogen compound has a narrow spectrum and is used as a narrow-spectrum luminescent material for preparing a luminescent layer of an organic electroluminescent device, the prepared organic electroluminescent device realizes narrow-spectrum TADF emission, the electroluminescent spectrum is in a green light-red light region, the half-peak width is less than 50nm, and the boron-nitrogen compound has a wide application prospect. And the highest external quantum efficiency of electroluminescence of the device is up to 24% or above.

The invention provides a Raman spectrum calibration method and system based on transient stimulated Raman scattering. The Raman spectrum calibration method comprises the following steps: acquiring stimulated Raman signals in a time domain in a transient stimulated Raman scattering mode; the time delay of each sampling point of the time domain Raman signal is tracked in real time through the reference laser interference fringes, and Raman displacement after Fourier transform is determined; detecting an exciting light spectrum obtained by sampling through a photoelectric detector, and calculating excitation efficiency at different Raman displacement positions to obtain an excitation efficiency curve; the intensity of Raman spectrums at different Raman displacement positions is calibrated through the excitation efficiency curve, the self-calibrated Raman spectrums are obtained, the self-calibration transient stimulated Raman scattering technology inherits the advantages of high time resolution and high spectral resolution of the transient stimulated Raman scattering technology, the self-calibration transient stimulated Raman scattering technology is combined with a self-calibration mechanism, and the self-calibration effect of the self-calibration transient stimulated Raman scattering technology is improved. The influence of excitation light fluctuation is eliminated, the Raman spectrum measurement accuracy and repeatability are remarkably improved, and the quantitative analysis capability is comparable to that of spontaneous Raman spectrum.

The invention provides a green fluorescent light-emitting material with high efficiency and long service life and application of the green fluorescent light-emitting material in an organic electroluminescent device. The material is based on tCzphB-Fl (CAS: 2841414-78-4), aromatic fused ring groups, particularly aromatic fused heterocyclic ring groups, are introduced into the structure of the material, and comprise dibenzo five-membered heterocyclic rings, naphtho five-membered heterocyclic rings, benzo five-membered heterocyclic rings and naphtho five-membered heterocyclic rings. Through the molecular design, fine regulation and control of a luminescent spectrum, HOMO / LUMO energy level and triplet exciton lifetime can be realized, so that the device performance is optimized. Compared with the prior art, the material provided by the invention can meet the requirements of different display products on luminescent spectrums, meanwhile, HOMO / LUMO energy level matching is optimized, the device efficiency is improved, and the driving voltage is reduced. In addition, the material can effectively regulate and control the service life and the utilization rate of triplet excitons, so that the efficiency and the service life of the device are improved. The asymmetric molecular structure also has excellent evaporation film-forming performance, and can effectively inhibit the hole blocking phenomenon.

The embodiment of the invention provides a test method for judging the lasing characteristic of a quantum well active layer, and the method comprises the steps: selecting a substrate, sequentially growing a buffer layer and the quantum well active layer on the substrate, and obtaining an epitaxial wafer; performing a variable excitation power surface photoluminescence test on the epitaxial wafer, and collecting a luminescence spectrum; carrying out single-peak or multi-peak function fitting on each obtained luminescence spectrum to obtain the integral intensity and the line width of a narrow peak at the low-energy end of the quantum well; drawing a scatter diagram that the integral intensity of the narrow peak at the low-energy end of the quantum well changes along with the excitation power, and obtaining a starting point threshold value of the narrow peak through linear fitting; and comparing the starting point threshold values and the line widths of the narrow peaks of the plurality of epitaxial wafers, and predicting the lasing characteristic of the quantum well active layer based on a comparison result. According to the test method, the advantages and disadvantages of the quantum well active layer lasing characteristic can be rapidly judged, the test method is a nondestructive test, the operation process is simple, the stability of the test result is good, and the test time can be effectively saved.

The invention is a method and computer system for determining one or more parameters quantitatively characterising the interaction between an antigen and an antibody. The method comprises producing a test region carrying an antigen that produces a first luminescence spectrum, bringing into contact with the test region a sample solution comprising an antibody that forms a complex with the antigen and produces a second luminescence spectrum different from the first luminescence spectrum, recording an image (30) or images of the test region with a digital imaging device, producing a 2D histogram (40) from intensity values of the image (30), performing curve fitting on the points of the 2D histogram (40), and determining the one or more parameters by means of the fitted curve.

The invention belongs to the technical field of light-to-light emission of fluorescent substances. The invention discloses a method for accurately measuring the pH value of a small amount (less than one drop) of liquid by fixing fluorescent substance molecules on the surface of a common glass slide by using silica sol and utilizing the physical phenomenon that the fluorescent substance molecules excite the light spectrum to change along with the pH value of the environment.

The invention discloses a method for measuring donor-bound exciton double-electron transition rate in a semiconductor material, and belongs to the field of measurement and characterization of semiconductor materials. The measurement method comprises the following steps: 1, measuring the peak intensity # imgabs0 # of a donor bound exciton peak and the peak intensity # imgabs1 # of a corresponding dual-electron transition peak in the semiconductor material at each temperature by using a steady-state photoluminescence spectrum; 2, measuring the service life # imgabs2 of a donor bound exciton peak at each temperature by using a time-resolved photoluminescence spectrum; 3, the quantum efficiency # imgabs4 # of the donor bound exciton peak is deduced by the # imgabs3 #, and the radiation composite lifetime # imgabs6 # of the donor bound exciton is deduced by combining the # imgabs3 # and the # imgabs5 #; and 4, dividing the relative intensity of the dual-electron transition peak and the donor bound exciton peak by the donor bound exciton radiation recombination lifetime to obtain the dual-electron transition rate # imgabs7 # of the donor bound exciton at each temperature. The problem that the double-electron transition rate is difficult to measure is solved, the change rule of the double-electron transition rate along with the temperature can be quickly and accurately obtained, and the method has important value for researching donor bound excitons and double-electron transition physical properties thereof.

An oxide fluorescent material comprises: at least one first element M1 selected from Li, Na, K, Rb, and Cs; at least one second element M2 selected from Mg, Ca, Sr, Ba, and Zn; at least one third element M3 selected from B, Al, Ga, In, and rare earth elements; at least one fourth element M4 selected from Si, Ti, Ge, Zr, Sn, Hf, and Pb; O; and Cr, wherein when the molar ratio of the at least one fourth element M4 in 1 mol of the composition is 5, the molar ratio of the at least one first element M1 is 0.7 or more and 1.3 or less, the molar ratio of the at least one second element M2 is 1.5 or more and 2.5 or less, the molar ratio of the at least one third element M3 is 0.7 or more and 1.3 or less, the molar ratio of oxygen is 12.9 or more and 15.1 or less, and the molar ratio of Cr is more than 0 and 0.2 or less, and wherein the oxide fluorescent material has a light emission peak wavelength in a range of 700 nm or more and 1,050 nm or less in a light emission spectrum of the oxide fluorescent material.

The present invention relates to a compound of the general formula, belonging to the technical field of organic electroluminescence, and particularly to a multi-resonance organic compound. The compound has a structure of the following formula: #imgabs0# The electroluminescence spectrum of an OLED device prepared using the compound of the present invention has a narrow half-maximum width, showing a significant multi-resonance effect. The device also has the advantages of low starting voltage, high luminous efficiency and long life, showing good application prospects.

The invention provides a film testing device and an experimental method thereof, the device comprises a clamping mechanism, a lifting mechanism and a lifting platform, the clamping mechanism is located above the lifting platform and is used for clamping two sides of a to-be-tested film, the lifting platform is provided with a supporting edge, and the center line of the clamped to-be-tested film corresponds to the supporting edge; the lifting platform is driven by the lifting mechanism to ascend and descend at the multiple of the height h1 or the height h2, so that the to-be-measured film abuts against the supporting edges to generate bending deformation, and the to-be-measured film can be bent by any curvature radius and accurately positioned. Therefore, in-situ detection of the thin film piece to be detected by various detection means such as Raman spectrum, white light interferometer, photoluminescence spectrum, X-ray diffraction and the like is realized. The device is used for combined testing of a white light interferometer and Raman spectrum or photoluminescence spectrum or X-ray diffraction, and in-situ load detection is carried out on the to-be-tested thin film, so that specific stress values of the to-be-tested thin film under different bending conditions are determined.

The present application relates to the technical field of LED, in particular to an infrared LED epitaxial wafer for improving spectrum and a preparation method thereof.The infrared LED epitaxial wafer comprises, from bottom to top, an N-type GaAs substrate, an N-type GaAs buffer layer, an N-type current expansion layer, an N-type confinement layer, a voltage division type single-peak light emitting layer, a P-type confinement layer, a P-type current expansion layer and a P-face contact layer.The voltage division type single-peak light emitting layer is a periodic structure grown by a fluctuation layer, a quantum well layer, a strain transition layer and a quantum barrier layer in sequence.Based on a conventional 940nm infrared LED epitaxial structure, the voltage division type single-peak light emitting layer is designed, which can effectively solve the double-peak problem caused by the light emitting spectrum anomaly due to the In component segregation local state, stress sudden change energy level splitting and unstable TMIn source of the precursor supply and other factors.The infrared LED has stable spectrum and only a single light emitting peak, and has excellent performance.

The invention provides an organic compound containing boron and nitrogen and application of the organic compound in an organic electronic device, the organic compound containing boron and nitrogen has a structure represented by a chemical formula (I)-a chemical formula (IV), and the organic compound containing boron and nitrogen is applied to the organic electronic device. The device using the organic compound containing boron and nitrogen has high luminous efficiency, narrow luminescent spectrum FWHM, long service life and the like.

The invention discloses a spectral measurement device and method for dynamically and controllably applying force and temperature. The device comprises a base, a liftable platform, a sample fixing device, a force loading kit, a heating plate, a heat preservation component and a spectrum acquisition system. The force loading suite can apply a periodic mechanical load with stable amplitude through eccentric transmission and force feedback control; the optical fiber probe is coaxially arranged along the hollow loading component to realize high matching of loading and a spectrum acquisition path; the sample fixing device and the heating plate are matched with the heat preservation component to form a constant-temperature light-proof environment, so that stable test conditions are provided. The problems that in the prior art, mechanical loads are difficult to load stably, temperature distribution is uneven, and spectrum collection is prone to being interfered are solved, synchronous, stable and high-fidelity collection of luminescent spectrums under the dynamic coupling condition of force and temperature is achieved, repeatability and reliability of test results are improved, and the method is suitable for popularization and application. The method is suitable for dynamic spectrum collection under the multi-field coupling condition.

The invention provides a blue phosphorescent organic light-emitting device with high efficiency and long service life and a display device. The blue phosphorescent organic light-emitting device comprises a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer and an electron transport layer, the light-emitting layer comprises a P-type main body material, an N-type main body material and a doping material; the peak value of the light-emitting spectrum of the P-type main body material is 365 nm to 400 nm, and the half-peak width is 35 nm to 45 nm; the peak value of the luminescent spectrum of the N-type host material is 410-450 nm, and the half-peak width of the N-type host material is 60-85 nm; the luminescent spectrum peak value of the doped material is 455nm to 470nm, and the half-peak width of the doped material is 18nm to 24nm; the T1 energy level of the P-type main body material is greater than the T1 energy level of the doped material; the T1 energy level of the N-type host material is greater than the T1 energy level of the doped material. The blue phosphorescent organic light-emitting device provided by the invention is high in efficiency and long in service life.

The invention provides a boron-nitrogen compound and application thereof, the boron-nitrogen compound has a structure as shown in a formula I and a formula II, the boron-nitrogen compound not only realizes fine adjustment of a spectrum, but also further improves luminous efficiency through extension conjugation and introduction of double B atoms. The boron-nitrogen compound has a narrow spectrum and is used as a narrow-spectrum luminescent material for preparing a luminescent layer of an organic electroluminescent device, the prepared organic electroluminescent device realizes narrow-spectrum TADF emission, the electroluminescent spectrum is in a green light-yellow light area, the half-peak width is less than 40nm, and the boron-nitrogen compound has a wide application prospect. And the highest external quantum efficiency of electroluminescence of the device reaches up to 30% or above.

The invention discloses a quantum dot composition, ink, a quantum dot film, a light-emitting device and a display device.The quantum dot composition comprises a first quantum dot, a second quantum dot and a third quantum dot, and the first quantum dot, the second quantum dot and the third quantum dot are included, the absolute value of the difference value of the average particle sizes of any two kinds of quantum dots in the first quantum dot, the second quantum dot and the third quantum dot is 0-2 nm. The particle size uniformity of the quantum dots in the quantum dot composition is good, fluorescence resonance energy transfer from high-energy quantum dots to low-energy quantum dots can be avoided, and a stable luminescence spectrum can be obtained.

The present application relates to a white phosphorescent organic light emitting diode with simple structure, which has an organic light emitting unit composed of a pair of electron donor material layer / electron acceptor material layer capable of forming an exciplex at the interface and several light color complementary phosphorescent ultra-thin layers embedded in the interface of the electron donor material layer / electron acceptor material layer and stacked together. Through the sensitization of the interface exciplex host to the phosphorescent ultra-thin layer guest, the complementary light emission of the phosphorescent ultra-thin layer is realized, and the white light emission is formed by combination. The present application utilizes the simple preparation process of the interface exciplex and the phosphorescent ultra-thin layer, effectively simplifies the device structure and the preparation process, and stabilizes the luminescence spectrum of the white light device through the limiting effect of the interface exciplex on the carriers and excitons.

According to an aspect of the present invention, provided may be a light-emitting device comprising: a substrate; a first light-emitting element disposed on the substrate and generating light of a first emission spectrum having a first dominant wavelength, by a current supplied through the substrate; and a second light-emitting element disposed on the substrate and generating light of a second emission spectrum having a second dominant wavelength and at least partially overlapping the first emission spectrum, by the current supplied through the substrate, wherein the intensity of the first dominant wavelength and the intensity of the second dominant wavelength are different from each other.

The application relates to the technical field of light-emitting materials, and discloses an in-vitro multiplex detection method and related equipment. The in-vitro multiplex detection method comprises the following steps: obtaining a first photoluminescence spectrum corresponding to a plurality of up-conversion luminescence coding materials and a second photoluminescence spectrum corresponding to a magnetic separation product, obtaining a color difference between the second photoluminescence spectrum and each first photoluminescence spectrum in a LAB color space, and comparing each color difference with a preset threshold value, so that the target type of a sample to be detected can be determined. The first photoluminescence spectra do not need to have different luminescence peak wavelengths, and obvious photoluminescence color differences do not need to be generated. In the multiplex detection application, the type of the up-conversion luminescence coding materials that can be used is greatly increased, and errors caused by human eye judgment and equipment limitations can be effectively avoided, so that the accuracy of the in-vitro multiplex detection is improved.

The application discloses a kind of alpha, beta surface pollution detector light leakage detection method and device, it is related to radiation monitoring sensing technical field, the method of the present application includes: using sensor to collect the light signal in detection chamber, obtain the intensity component of red, green, blue three color channels;The ratio of blue light intensity component and the sum of red, green light intensity component is calculated;According to the ratio and the dynamic threshold parameter of preset light leakage determination;If it is determined that natural light leaks, trigger alarm and shield current detection data.The core of the present application is that the luminescence spectrum of ZnS (Ag) scintillator is concentrated in blue light band, while natural light is full-band continuous spectrum.By analyzing the proportional relationship of RGB color components, the accurate and rapid differentiation between light leakage signal and real nuclear radiation signal is realized.This method effectively solves the technical problem that traditional hardware shielding method cannot identify micro-hole light leakage, and has the advantages of high detection sensitivity, fast response and strong anti-interference ability.

The present invention addresses the problem of providing a light-emitting device, an illumination device, an image display device, and / or a display lamp for a vehicle, the light-emitting device, the illumination device, the image display device, and / or the display lamp having excellent one or more of color rendering, color reproducibility, conversion efficiency, safety, and contrast. This light-emitting device is provided with a first light-emitting body and a second light-emitting body that emits visible light when irradiated with light from the first light-emitting body, and the second light-emitting body contains at least a red phosphor that satisfies (A) and (B) below. (A) the emission spectrum includes at least one emission peak having a full width at half maximum (FWHM) of 20-65 nm, and (B) the chromaticity coordinate of the emission color is present between two straight lines represented by formula (a) and formula (b) in a CIE1931 chromaticity coordinate system with the coordinate represented by (x, y) as a reference, and 0.290 < = y < = 0.350. Y is equal to 0.992-x... (a), and y is equal to 1.000-x... (b).

The invention relates to the technical field of LEDs, in particular to an infrared LED epitaxial wafer for improving a spectrum and a preparation method of the infrared LED epitaxial wafer. The infrared LED epitaxial wafer sequentially comprises an N-type GaAs substrate, an N-type GaAs buffer layer, an N-type current expansion layer, an N-type limiting layer, a voltage division type single-peak light-emitting layer, a P-type limiting layer, a P-type current expansion layer and a P-surface contact layer from bottom to top. The partial pressure type single-peak light-emitting layer is of a periodic structure formed by sequentially growing a fluctuation layer, a quantum well layer, a strain transition layer and a quantum barrier layer. On the basis of a conventional 940nm infrared LED epitaxial structure, the design of the partial pressure type single-peak light-emitting layer is adopted, the double-peak problem caused by abnormal light-emitting spectrum due to factors such as In component segregation local state, stress mutation energy level splitting and instability of a TMIn source supplied by a precursor can be effectively solved, the infrared LED is stable in spectrum and only has a single light-emitting peak, and the light-emitting efficiency is greatly improved. The performance is excellent.

The application belongs to the technical field of light emitting and display, and particularly discloses a near-violet thermal exciton luminescent material based on multiple resonance electron donor and acceptor units and application. The luminescent material takes 2,12-di-tert-butyl-5,9-diox-13b-boron naphtho[3,2,1-de] anthracene as an electron acceptor unit, and 2,5-di-tert-butyl indole [3,2,1-jk] carbazole as an electron donor unit. The two rigid MR donor and acceptor units are directly connected through a sigma bond, forming a small-angle dislocation non-coplanar structure, effectively inhibiting concentration quenching and red shift of the luminescent spectrum; meanwhile, the combination of the two MR units promotes the reverse intersystem crossing of the high-level triplet state to the degenerate singlet state (T6→S1 / S2), realizing efficient, narrow spectral band near-violet light emission of the material. The luminescent efficiency of the preferred solution processing organic light emitting device is as high as 12.01%, and has an attractive application prospect.

The invention discloses a polycyclic compound containing a triarylamine structure, and the structural general formula is as shown in the formula I. The polycyclic compound containing the triarylamine structure is good in stability, and can effectively improve the luminous efficiency and the contrast ratio and remarkably improve the display effect by improving the material oscillator intensity and reducing the half-peak width of a luminescent spectrum and being used for a blue luminescent device. The defects in the prior art are overcome. # imgabs0 #

The invention provides a sintered body and a light-emitting device. The sintered body contains at least one phosphor selected from the group consisting of nitride phosphors having a composition represented by formula (I) and alpha-sialon phosphors having a composition represented by formula (II), and in a chromaticity diagram of the CIE1931 color system, a region A1 is defined by a line connecting a 1a-th point (x = 0.549, y = 0.425), a 2a-th point (x = 0.562, y = 0.438), a 3a-th point (x = 0.589, y = 0.411), and a 4a-th point (x = 0.576, y = 0.407). The sintered body emits light having a hue within the region A1 when irradiated with excitation light, and the light emitted when irradiated with excitation light includes light obtained by wavelength conversion of excitation light by a phosphor included in the sintered body and excitation light that has passed through the sintered body. The ratio (Z2 / Z1) of the integral value of a second integral value (Z2) of 400-500 nm inclusive to a first integral value (Z1) of more than 500 nm and 800 nm or less in the emission spectrum of light emitted from the sintered body is 0.005 or more.