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A method for preparing anti-radiation tantalum coating by cold spraying

An anti-irradiation, cold spray technology, applied in the direction of pressure inorganic powder coating, can solve problems such as damage to electronic components, achieve the effect of simple operation and avoid high temperature conditions

Active Publication Date: 2022-01-14
INST OF METAL RESEARCH - CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

High energy particles can cause damage to electronic components

Method used

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  • A method for preparing anti-radiation tantalum coating by cold spraying
  • A method for preparing anti-radiation tantalum coating by cold spraying
  • A method for preparing anti-radiation tantalum coating by cold spraying

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Embodiment 1

[0034] In this embodiment, spherical Al powder with a particle size of 30-40 μm is first deposited on the ceramic substrate as a primer coating. The operating temperature of cold spraying is 200° C., the operating pressure is 2.0 MPa, and the spraying time is 5 minutes. Then deposit irregular-shaped Ta powder with a particle size of 10-45 μm on the primer coating. The operating temperature of cold spraying is 400 ° C, the operating pressure is 2.0 MPa, the spraying time is 15 minutes, and the spraying distance is 20 mm. Compressed air is selected as the working gas. Coating cross section such as figure 1 As shown, the thickness of the Al primer coating is 80 μm, and the thickness of the Ta coating is 300 μm.

Embodiment 2

[0036] In this embodiment, the irregular-shaped Ta powder with a particle size of 10-45 μm is directly deposited on the Ti substrate. The operating temperature of cold spraying is 600°C, the operating pressure is 2.0MPa, the spraying time is 15min, the spraying distance is 20mm, and compressed air is selected as the working gas. Coating cross section such as figure 2 As shown, the prepared Ta coating has a thickness of 560 μm and a porosity of 0.38%. Since Ti and Ta have the same affinity as Al and Ta, it is also possible to deposit Ta coating directly without using a primer layer.

Embodiment 3

[0038] In this embodiment, spherical Al powder with a particle size of 20-30 μm is first deposited on the ceramic substrate as a primer coating. The operating temperature of cold spraying is 300° C., the operating pressure is 3.0 MPa, and the spraying time is 5 minutes. Then deposit irregular-shaped Ta powder with a particle size of 50-60 μm on the primer coating. The operating temperature of cold spraying is 500 ° C, the operating pressure is 3.0 MPa, the spraying time is 15 minutes, and the spraying distance is 30 mm. Nitrogen is selected as the working gas. Coating cross section such as image 3 As shown, the thickness of the Al primer coating is 100 μm, and the thickness of the Ta coating is 600 μm.

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Abstract

The invention belongs to the field of protective coating preparation, and in particular relates to a method for preparing an anti-radiation tantalum coating by cold spraying. The method comprises the following steps: (1) spraying Al or Ti metal powder on the surface of the device substrate by using cold air power spraying technology to form a metal primer coating; (2) using cold air power spraying technology to spray pure Ta powder onto the surface of the device substrate On the undercoat layer, a Ta coating layer is formed. The invention effectively avoids the high temperature condition required for the preparation of the tantalum coating, and the performance degradation problems such as oxidation caused thereby. The invention adopts cold spraying to prepare the anti-radiation tantalum coating, which can be used for the anti-radiation protection of the outer surface of electronic packaging devices.

Description

technical field [0001] The invention belongs to the field of protective coating preparation, and in particular relates to a method for preparing an anti-radiation tantalum coating by cold spraying. Background technique [0002] Electronic components in space stations and aircraft are exposed to 5×10 -4 ~1×10 -2 In the space irradiation environment with rad(Si) / s radiation dose, it is subjected to the irradiation of particles with different energies. High-energy particles can cause damage to electronic components. Therefore, it is necessary to design and adopt radiation-resistant coatings to protect the above-mentioned electronic components. [0003] The radiation resistance of a material is affected by factors such as the material itself and the actual use environment. On the one hand, the internal factors of the material, such as the formation and migration of defects, the hindrance of grain boundaries, etc., determine the radiation resistance of the material. On the o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C24/04
CPCC23C24/04
Inventor 熊天英赵鹤然唐俊榕杜昊王吉强刘晗珲沈艳芳杨颖毛天亮
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI