Microwave plasma diamond growth equipment and application method thereof

Abstract

The invention discloses microwave plasma diamond growth equipment. The equipment comprises a coupling cavity, an opening is formed in the top of the coupling cavity, a process gas inlet end is arranged in the coupling cavity, a base station is arranged in the coupling cavity, a substrate is placed on the base station, a microwave device is arranged above the coupling cavity, and comprises a microwave source, a waveguide, an antenna and a connecting piece with an opening in the bottom, one end of the microwave source is connected with the waveguide; a connecting piece is connected below the waveguide; one end of the antenna penetrates through the waveguide and is arranged in the connecting piece; and the opening in the top of the coupling cavity is in butt joint with the opening in the bottom of the connecting piece. Process gas is ionized through high energy generated by microwaves, and the ionized gas grows into diamond on the surface of the substrate. Based on the principle of chemical deposition, the diamond single crystal film grown by the microwave plasma diamond growth equipment is of great significance in application of the infrared diaphragm. The substrate does not need tobe heated by a hot wire, so that a pollution source is thoroughly eliminated, the energy density is improved, and the film grows better and faster.

Description

technical field [0001] The invention relates to the technical field of diamond growth, in particular to a microwave plasma diamond growth device and an application method thereof. Background technique [0002] The current diamond film equipment adopts the hot wire method. Because the heating source is a hot wire, it will volatilize and cause pollution, and it is impossible to grow high-quality single crystal diamond film. [0003] Existing diamond thin film equipment using hot wire method has the following disadvantages: [0004] 1. Using hot wire for heating, the hot wire will volatilize during the heating process, resulting in pollution and unable to grow single crystal diamond. [0005] 2. The power density of the heating wire is low, and the energy consumption of the equipment is high. [0006] 3. The heating wire is used for one-time use, and the cost is high. Contents of the invention [0007] The object of the present invention is to provide a microwave plasma di...

AI Technical Summary

Problems solved by technology

[0004] 1. Using hot wire heating, the hot wire will volatilize during the heating process, resulting in pollution and unable to grow single crystal diamond

[0005] 2. The power density of the heating wire is low, and the energy consumption of the equipment is high

[0006] 3. The heating wire is used for one-time use, and the cost is high

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