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Metal-oxide-semiconductor field-effect transistor and manufacturing method thereof

A technology of oxide semiconductors and field effect transistors, which is applied in the field of metal oxide semiconductor field effect transistors and its production, can solve the problems of insufficient diffusion depth, small P+ area, and insufficient improvement effect, so as to improve EAS parameters, doping The effect of increasing the impurity concentration

Active Publication Date: 2022-05-17
深圳市昭矽微电子科技有限公司
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0010]However, the P+ region obtained by this manufacturing method is too small, and the diffusion depth is not enough, so the improvement effect on the EAS of the device is not obvious enough

Method used

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  • Metal-oxide-semiconductor field-effect transistor and manufacturing method thereof
  • Metal-oxide-semiconductor field-effect transistor and manufacturing method thereof
  • Metal-oxide-semiconductor field-effect transistor and manufacturing method thereof

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Embodiment Construction

[0045] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0046] It should be noted that when an element is referred to as being “disposed on” another element, it may be directly on the other element or there may also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present.

[0047]Unless otherwise defined, all technical and scientific terms used herein have the same meaning ...

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Abstract

The invention relates to a metal oxide semiconductor field effect transistor and a manufacturing method thereof. On one side of an N-type base, a first groove and a second groove are arranged at intervals, and a gate oxide layer covers the N-type base and each groove. The polysilicon layer covers the portion of the gate oxide layer between the first trench and the second trench and fills the first trench and the second trench. When implanting P-type ions, the implantation dose of P-type ions is increased, and when P-type ions are subsequently driven in, the P-type ions diffuse to the area between the first trench and the second trench and close to one of the trenches. region and the region below the trench, and due to the lateral barrier effect of the trench, the lateral diffusion of the P-region will not be too large, and the doping concentration of the channel region will not be too high, so as not to affect the operation of the device The turn-on voltage, because the dose of the P-region is increased compared with the traditional method, the doping concentration of the entire P-region is increased, and the EAS parameter of the device is greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a metal oxide semiconductor field effect transistor and a manufacturing method thereof. Background technique [0002] For a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device, in order to increase the important parameter EAS (single-pulse avalanche breakdown energy) of the device, it is necessary to increase the doping concentration of the P-body region. However, increasing the doping concentration of the P-body region will cause the lateral diffusion of the P-body region to be too large, and the large lateral diffusion will inevitably cause the area of ​​the device to become larger. At the same time, because the doping concentration of the P-region increases, It will also cause the working turn-on voltage of the device to be too high. Therefore, in the conventional manufacturing process of MOSFET devices ( figure 1 In the above-mentione...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/78H01L29/0603H01L29/0684H01L29/66477
Inventor 马万里李双马云骁
Owner 深圳市昭矽微电子科技有限公司
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