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A method of manufacturing a bipolar high-frequency power transistor chip with low thermal budget

A technology for power transistors and manufacturing methods, which is applied in the field of bipolar high-frequency power transistor chip manufacturing, can solve problems such as complex processes, waste of energy, and reduced ability of transistors to resist gamma radiation, so as to simplify the process flow, shorten working hours, and avoid The effect of repeated high temperature heating

Active Publication Date: 2017-10-24
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

The process is complicated, wastes energy, and the repeated high-temperature heating of the wafer reduces the anti-gamma radiation ability of the transistor

Method used

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  • A method of manufacturing a bipolar high-frequency power transistor chip with low thermal budget
  • A method of manufacturing a bipolar high-frequency power transistor chip with low thermal budget

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Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0025] Such as figure 2 As shown, the present invention is a method for manufacturing a bipolar high-frequency power transistor chip with a low thermal budget, comprising the following steps:

[0026] (1) First clean the selected epitaxial wafer, and then perform high temperature oxidation. The thickness of the oxide layer should be able to shield the high boron ion implantation (if the diffusion process is used, it is necessary to shield the boron in the silicon ...

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Abstract

The invention discloses a low-thermal-budget manufacturing method of a bipolar high-frequency power transistor chip, and relates to the field of semiconductors and manufacturing thereof. The manufacturing method is characterized in that thermal diffusion is replaced by ion injection, no high-temperature thermal annealing process is carried out after high boron ion injection, but one time of high-temperature annealing is performed after low boron ion injection, and the annealing temperature is controlled in a range from 950 DEG C to 1050 DEG C, so that the thermal budget of the manufacturing is reduced, the process flow is simplified, a wafer is prevented from being repeatedly heated at a high temperature, the energy source is saved, and the deformation probability of the wafer, caused by repeated high temperatures, is lowered.

Description

technical field [0001] The invention relates to the field of semiconductor devices and their manufacture, in particular to a method for manufacturing a bipolar high-frequency power transistor chip with low thermal budget. Background technique [0002] Diffusion or ion implantation processes are generally used in the manufacture of bipolar high-frequency power transistor dies to achieve the base and emitter regions of the transistor. Whether thermal diffusion process or ion implantation process is adopted, a high temperature process is required. If high-boron diffusion and low-boron diffusion are used, high temperature is required for diffusion; while ion implantation is used, high-temperature annealing is also required after high-boron ion implantation and low-boron ion implantation to activate implanted impurities and eliminate implantation damage. That is, a certain thermal budget is required to ensure the normal progress of the transistor chip process. [0003] In the p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/66H01L21/324H01L21/266
CPCH01L21/266H01L21/324H01L29/66234
Inventor 潘宏菽张宏宝商庆杰张力江
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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