Formation method and etching method for amorphous carbon hard mask layer

Abstract

Provided is a formation method for an amorphous carbon hard mask layer. The formation method includes that a semiconductor substrate is provided; the initial amorphous carbon hard mask layer is formed on the semiconductor substrate and a reaction temperature for the formation of the initial amorphous carbon hard mask layer is 200 DEG C-300 DEG C; nitrogenous plasma is used for processing the initial amorphous carbon hard mask layer. The formation method of the amorphous carbon hard mask layer forms the amorphous carbon hard mask layer by adopting a low temperature technology, the amorphous carbon hard mask layer with high compactness is formed by the method that the nitrogenous plasma is used for processing the initial amorphous carbon hard mask layer, the heating budget is reduced and stability of a device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming an amorphous carbon hard mask layer and an etching method. Background technique [0002] The manufacture of semiconductor integrated circuits uses a series of processes such as lithography, etching, implantation and deposition to form a large number of various types of complex devices on the same silicon substrate, and interconnect them to have complete electronic functions. With the rapid development of ultra-large-scale integrated circuits, the integration of chips is getting higher and higher, and the size of components is getting smaller and smaller. The various effects caused by the high density and small size of devices have an increasingly prominent. [0003] Taking hard mask technology as an example, when the semiconductor process enters 90nm, due to the smaller and smaller photolithography size, it is often necessary to form a hard mask la...

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Problems solved by technology

[0004] The existing amorphous carbon hard mask layer is formed by plasma-enhanced chemical vapor deposition (PECVD), and a high temperature of 400 to 600 degrees Celsius is used in the process of forming the amorphous carbon hard mask layer by the plasma-enhanced chemical vapor deposition process. The thickness uniformity of the amorphous carbon hard mask layer formed at the existing high temperature is not good, and the thermal budget is high, which affects the stability of the device

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