Manufacture method of HD Ru nanocrystalline atomic layer deposition for flash memory

An atomic layer deposition and memory technology, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve the problems of lack of metal layer thickness and poor spatial controllability.

Inactive Publication Date: 2007-10-24
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Direct deposition methods include electron beam evaporation, sputtering, ion implantation, atomic layer deposition, etc., but electron

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  • Manufacture method of HD Ru nanocrystalline atomic layer deposition for flash memory
  • Manufacture method of HD Ru nanocrystalline atomic layer deposition for flash memory

Examples

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Embodiment 1

[0027] After cleaning the silicon wafer by traditional process, grow 3nm high dielectric constant Al by atomic layer deposition method 2 o 3 For thin films, the reaction sources used are trimethylaluminum and water. Then, with dicycloyl ruthenium (RuCp 2 ) and oxygen as the reaction source, using the atomic layer deposition method on Al 2 o 3 Ru nanocrystals are deposited on the film. The substrate temperature used in this example is 330°C, the pressure in the reaction chamber is about 2.5 Torr, the number of ALD reaction cycles is 200, and a single reaction cycle includes 2 seconds of RuCp 2 Carrier gas is introduced, nitrogen is purged for 2 seconds, oxygen is introduced for 1 second, and nitrogen is purged for 2 seconds. The obtained Ru nanocrystals have an average diameter of 14 nm and a density of 9 × 10 10 cm -2 ,as shown in picture 2. Table 2 lists the effects of different annealing conditions on the size and density of Ru nanocrystals. It can be seen that the s...

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Abstract

The atomic-layer pulse deposition preparation method for high-density nano-Ru crystal comprises: heat growing SiO2 layer or film with high dielectric constant on the Si surface, depositing 2-5nm Ru film with atomic-layer pulse deposition, and fast annealing at high temperature. This invention is compatible to CMOS technique, and operates simply.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation technology, and in particular relates to a method for preparing high-density ruthenium nanocrystals on the surface of silicon oxide and high dielectric constant dielectric films, so as to be used in nanocrystal flash memory devices. technical background [0002] The growing market of portable electronic products has greatly stimulated the demand for flash memory (ie, flash memory devices). Flash memory is developing towards high speed, low power consumption and high storage density, which requires further shrinking of the physical size of flash memory cells. The traditional polysilicon floating gate structure memory can no longer meet the development needs of future memory, because when the thickness of the tunnel oxide layer connected to the silicon substrate is reduced to a few nanometers, the trapped charges can easily return to the device through the tunnel oxide layer. In t...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/285
Inventor 丁士进陈玮张敏张卫
Owner FUDAN UNIV
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