Integrally formed LED device and manufacturing method thereof

Abstract

The invention discloses an integrally formed LED device and a manufacturing method thereof. The integrally formed LED device comprises a bare copper sheet, an LED wafer and a bonding wire are fixed onthe bare copper sheet, the integrally formed LED device further comprises cuboid-shaped colloid wrapping the bare copper sheet completely, and the manufacturing method of the integrally formed LED device comprises: providing the bare copper sheet, and performing etching on the bare copper sheet; electroplating Ni and Ag on the bare copper sheet; pasting an adhesive high-temperature-resistant adhesive film on the back surface of the bare copper sheet; fixing an LED wafer and a bonding wire on the bare copper sheet; and completely wrapping the bare copper sheet with colloid, baking and cuttingby using an integrated compression molding mode. According to the integrally formed LED device and the manufacturing method thereof, the problem of poor binding force can be avoided, the quality and performance of the packaging device are effectively improved, and the manufacturing cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of lighting equipment, and in particular relates to an integrally formed LED device and a manufacturing method thereof. Background technique [0002] The die structure of the existing LED device is as follows: figure 1 as shown, figure 1 It is a schematic diagram of the die structure of the existing LED device. It can be seen that the structure of this LED device is to fix the bare copper plate 102 on the BT substrate 101, make the LED chip 103 and the bonding wire 104 on the bare copper plate 102, and then use the package The colloid 105 is molded, and the encapsulation colloid is generally silica gel. Generally speaking, the thickness of the BT substrate 101 is 0.28mm, and the thickness of the encapsulant 105 is 0.3mm. This kind of BT substrate generally uses gas from Mitsubishi, Japan, and the cost is relatively high, and the bonding force between the encapsulant 105 and the BT substrate 101 Poor, resu...

AI Technical Summary

Problems solved by technology

Generally speaking, the thickness of the BT substrate 101 is 0.28mm, and the thickness of the encapsulant 105 is 0.3mm. This kind of BT substrate generally uses gas from Mitsubishi, Japan, and the cost is relatively high, and the bonding force between the encapsulant 105 and the BT substrate 101 Poor, resulting in insufficient reliability of the packaged device, there is a risk of colloid falling off during the packaging process, and in a high-temperature and high-humidity environment, there is still a problem of delamination between the packaging colloid and the BT substrate. If it is used for a long time, the dead light rate is high. , so there is a great quality risk

Images