Systems and methods for plasma-less de-halogenation

Abstract

A substrate processing system to remove residual halogen species from a substrate includes a processing chamber and a substrate support arranged in the processing chamber to support a substrate. The substrate includes residual halogen species. A heater heats the substrate to a temperature in a predetermined temperature range from 100 DEG C to 700 DEG C during a processing period. A chamber pressure controller controls pressure inside the processing chamber in a predetermined pressure range greater than 10 Torr and less than 800 Torr during the processing period. A vapor generator supplies water vapor at least one of in the processing chamber or to the processing chamber during the processing period.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Patent Application No. 15 / 671,926, filed August 8, 2017. The entire disclosure content of the above application is incorporated herein by reference. technical field [0003] The present disclosure relates to substrate processing systems and methods, and more particularly to systems and methods for plasma-free dehalogenation of substrates. Background technique [0004] The background description provided here is for the purpose of generally presenting the context of the disclosure. The work of the presently named inventors, to the extent described in this Background section and aspects of this specification that would not otherwise be considered prior art at the time of filing, is neither expressly nor implicitly admitted to be prior art to the present disclosure. [0005] Substrate processing systems may be used to deposit, etch or process films on substrates such as semiconduc...

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Problems solved by technology

Exposure to high temperature annealing can also cause issues such as film property changes, atomic diffusion, dopant profile shifting, etc.

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