gate driver IC

An integrated circuit and gate drive technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems such as the influence of conduction performance on the reliability of gate drive integrated circuits

Active Publication Date: 2022-08-02
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Therefore, when realizing these functions, it is generally hoped that the gate drive integrated circuit has a higher withstand voltage performance; in addition, for the field effect transistor in the gate drive integrated circuit, its conduction performance will also affect the gate drive integrated circuit. impact on the reliability of the circuit

Method used

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Embodiment Construction

[0052] The gate driver integrated circuit proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that, the accompanying drawings are all in a very simplified form and in inaccurate scales, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention.

[0053] figure 1 It is a schematic structural diagram of the gate driver integrated circuit in the first embodiment of the present invention, such as figure 1 As shown, the gate driver integrated circuit includes a substrate 100 and field effect transistors.

[0054]A doping layer PW of a first doping type is formed in the substrate 100 . And, the field effect transistor includes a second doping type source region 200S, a second doping type transition re...

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Abstract

The present invention provides a gate driving integrated circuit. In the gate driving integrated circuit, a transition region is provided between the second drain region and the first drain region, so that the high voltage can be dispersed in a longer distance by using the transition region, and the high voltage is prevented from being applied to the low voltage region middle. In addition, a lightly doped region with low doping concentration is also arranged on the outer periphery of the source region, which can not only improve the hot carrier effect of the device, but also improve the breakdown voltage of the PN junction in the source region, which is beneficial to Improve device stability.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a gate driving integrated circuit. Background technique [0002] The high-voltage gate driver integrated circuit is the product of the combination of power electronic device technology and microelectronics technology, and is a key component of mechatronics. High-voltage gate driver ICs are widely used, such as electronic ballasts, motor drives, dimming, and various power modules. [0003] The high-voltage gate driver integrated circuit generally includes a high-side drive control module, a low-side drive control module and a level shift module. Among them, the low-voltage side drive control module works under the conventional voltage as the control signal part; the high-voltage side drive control module mainly includes the high-voltage control signal part; and the level shift module is used to realize the transmission of the low-voltage side control signal to the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/40H01L29/06
CPCH01L29/7816H01L29/404H01L29/0615
Inventor 杨维成姚旭红
Owner NINGBO SEMICON INT CORP
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