Display panel and preparation method thereof
A technology for display panels and metal layers, applied in nonlinear optics, instruments, optics, etc., to achieve the effects of reducing reflectivity, reducing color deviation, and reducing differences
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Embodiment 1
[0034] Such as figure 1 As shown, this embodiment provides a display panel 100 comprising: a metal layer 1 , a darkening layer 2 and a conductive layer 3 .
[0035] The material of the metal layer 1 includes: at least one of Cu, Mo, Ti, Al, Ni, Nb, Ta and Cr. Wherein the thickness of the metal layer is 200-700nm. Among them, 200 nm, 400 nm, and 600 nm are preferable. In this way, effects such as signal transmission can be achieved.
[0036] In fact, the display panel 100 includes a substrate and thin film transistors disposed on the substrate. The thin film transistor includes: an active layer, a gate insulating layer, a gate layer, an interlayer insulating layer, and a source-drain layer. The material of the gate layer and the source-drain layer is metal, so the metal layer 1 described in this embodiment is the gate layer and the source-drain layer in the thin film transistor.
[0037] The darkening layer 2 is disposed on one or both surfaces of the metal layer 1 , and i...
Embodiment 2
[0048] Such as figure 2 As shown, the display panel 100 of this embodiment includes: a metal layer 1 , a darkening layer 2 and a conductive layer 3 .
[0049] The material of the metal layer 1 includes: at least one of Cu, Mo, Ti, Al, Ni, Nb, Ta and Cr. Wherein the thickness of the metal layer is 200-700nm. Among them, 200 nm, 400 nm, and 600 nm are preferable. In this way, effects such as signal transmission can be achieved.
[0050] In fact, the display panel 100 includes a substrate and thin film transistors disposed on the substrate. The thin film transistor includes: an active layer, a gate insulating layer, a gate layer, an interlayer insulating layer, and a source-drain layer. The material of the gate layer and the source-drain layer is metal, so the metal layer 1 described in this embodiment is the gate layer and the source-drain layer in the thin film transistor.
[0051] The darkening layer 2 is disposed on one or both surfaces of the metal layer 1 , and in thi...
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