Three-dimensional memory, preparation method thereof and electronic equipment

Abstract

The invention provides a three-dimensional memory, a preparation method thereof and electronic equipment. The preparation method comprises the following steps: providing a substrate; forming a first laminated structure on one side of the substrate; forming a plurality of first channel holes which penetrate through the first laminated structure and extend to the substrate; forming an etching barrier layer filling the first channel holes; forming a second laminated structure on the first laminated structure and the etching barrier layer; forming a plurality of second channel holes penetrating through the second laminated structure; and removing the etching barrier layer to enable the first channel holes and the second channel holes to be communicated to form channel holes. The channel holes,which are formed in one step in related technologies, are formed in two steps in the method of the invention. The first channel holes close to the bottom are first formed, and then the other second channel holes communicated with the first channel holes are formed. According to the forming method provided by the invention, the forming difficulty of the channel holes can be reduced, the channel holes with excellent structures are formed, and the uniformity of the depth of the channel holes is improved.

Description

technical field [0001] The application belongs to the technical field of semiconductors, and in particular relates to a three-dimensional memory, a preparation method thereof, and electronic equipment. Background technique [0002] Since the three-dimensional memory has low power consumption, light weight, and is a non-volatile storage product with excellent performance, it has been more and more widely used in electronic products. But at the same time, users' expectations and requirements for 3D memory are getting higher and higher. For example, channel holes usually need to be formed on the stacked structure, so as to form NAND strings in the channel holes to electrically lead out certain components in the stacked structure. However, as the number of three-dimensional memory layers increases, that is, the depth of the stacked structure increases, the bottom of the channel hole cannot be formed or its quality is poor, which greatly increases the difficulty of forming the c...

AI Technical Summary

Problems solved by technology

However, with the increase in the number of three-dimensional memory layers, that is, the increase in the depth of the stacked structure, the bottom of the channel hole cannot be formed or its quality is poor, which greatly increases the difficulty of forming the channel hole.

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