36results about How to "Reduce the difficulty of formation" patented technology

The invention discloses positive lead plaster for a lead-acid storage battery and a preparation method of the positive lead plaster. The positive lead plaster is characterized by consisting of the following raw materials by weight percent: 7 to 10 percent of 1.4g/ml dilute sulfuric acid, 8 to 12 percent of deionized water, 5 to 20 percent of red lead, 0.1 to 0.4 percent of colloid graphite, 0.1 to 0.3 percent of stannous sulfate, 0.1 to 0.3 percent of anhydrous sodium sulfate, 0.2 to 0.5 percent of 4BS, 0.1 to 0.3 percent of diantimony trioxide, 0.05 to 0.2 percent of polyester short fibers, and the balance being lead powder. After the lead plaster which is prepared by utilizing the formula and the preparation method is prepared into the storage battery, the storage battery has the characteristics of high primary capacity, long service life, good low-temperature performance and good charging capacity.

A formation method of a contact plug comprises the steps of providing a substrate; forming an interlayer dielectric layer on the substrate; forming a high K dielectric layer on the interlayer dielectric layer; etching the high K dielectric layer and the interlayer dielectric layer orderly until the substrate is exposed to form a contact hole; continuously etching the high K dielectric layer along the contact hole until the diameter of the contact hole located at the high K dielectric layer is increased; adopting a conductive material to fill the contact hole. The formation method of the contact plug enables the formation difficulty of the contact plug to be reduced and also the quality of the formed contact plug to be improved.

The invention discloses a GaN-based HEMT low-temperature gold-free ohmic contact electrode. The GaN-based HEMT low-temperature gold-free ohmic contact electrode comprises a GaN-based HEMT epitaxial layer, wherein a GaN channel layer is arranged in the GaN-based HEMT epitaxial layer. The electrode comprises a first metal layer Ti, a second metal layer Al and a third metal layer TiW which are sequentially arranged on the upper surface of the GaN-based HEMT epitaxial layer from bottom to top, or a first metal layer Ti, a second metal layer Al, a third metal layer Ti and a fourth metal layer TiW which are sequentially arranged from bottom to top. The invention also correspondingly discloses a preparation method of the electrode. According to the invention, the annealing temperature of GaN-based HEMT ohmic contact is effectively reduced, 2DEG leakage caused by overall etching of an AlGaN barrier layer and current reduction during ohmic contact forming are improved, ohmic contact forming difficulty is reduced, and the appearance and edge of an ohmic contact surface after low-temperature alloy annealing are smoother. Meanwhile, the manufacturing cost of a GaN-based HEMT device can be reduced.

A laser radar transmitting system, a design method thereof, and a laser radar are provided. The laser radar transmitting system comprises a light source including at least one laser for transmitting first detection light beams; a transmitting optical component used for collimating the first detection light beams into parallel light; a diffractive optical element that splits each collimated first detection light beam into N second detection light beams in the vertical field-of-view direction of the laser radar, wherein the beam splitting ratio among the respective diffraction angles of the diffractive optical element is set as the ratio of the respective predetermined detection distances in the vertical field-of-view direction corresponding to the respective diffraction angles. The technical solution of the invention can not only effectively reduce the number of lasers in the laser radar, but also can take account of both the detection distance and the energy consumption control.

The invention relates to a close cutting fracturing method. The method comprises the steps that shale parameters are evaluated, and fracture parameters and fracturing construction parameters are optimized; perforation operation of the first time is carried out; fracturing treatment is carried out, and a liquid rubber plug carrying a propping agent is injected after fracturing treatment is finished; displacement operation is carried out; perforation operation of the second time is carried out; fracturing treatment and displacement operation are carried out; ball throwing temporary plugging is carried out on transformed perforation clusters; fracturing treatment is carried out on perforation clusters which are not transformed; displacement operation is carried out; a bridge plug is tripped in, and the above steps are repeated until construction of all sections is completed; and plug drilling after pressing, flowback, testing and production are carried out. 5-8 clusters of high-difficultyoperation are converted into 3-stage fracturing operation through two times of perforation operation and ball throwing temporary plugging in a single section, and therefore conventional 3-6 clustersof the single section are reduced into 1-2 clusters of the single stage fracturing operation, the liquid inlet amount of a single cluster is increased, the requirement of fracturing construction for displacement is reduced, and a construction pressure window is enlarged; and meanwhile, the horizontal principal stress difference is reduced through the stress shadow effect, the fracture complexity is improved, and the transformation size of a deep shale gas well is increased.

The invention relates to a memory and a forming method thereof. The formation method of the memory comprises the following steps of: providing a storage substrate, wherein the storage substrate comprises a substrate and a device layer; the device layer is formed on the front surface of the substrate; a storage structure and an interconnection structure are formed in the device layer; the interconnection structure is electrically connected with the storage structure; an insulating layer is formed in the substrate; at least part of the interconnection structure is formed on the surface of the insulating layer; the top surface of the insulating layer is flush with the front surface of the substrate; and the bottom surface of the insulating layer is flush with the back surface of the substrate; forming a dielectric layer positioned on the back surface of the substrate and the bottom surface of the insulating layer; and forming a through contact part penetrating through the dielectric layerand the insulating layer, wherein the through contact part is electrically connected with at least part of the interconnection structure. The method can save the process steps and reduce the cost.

The invention discloses a durable lead-acid storage battery positive electrode lead paste, and belongs to the technical field of lead storage battery paste mixing processes. The durable lead-acid storage battery positive electrode lead paste comprises 100 parts of lead powder, 0.2 part of short fibers, 9 parts of red lead, 13-14 parts of pure water, 11 parts of sulfuric acid, 1 part of tetrabasic lead sulfate (4BS) and 1.5 parts of carbon black. Th concentration of the sulfuric acid is 50%. According to the invention, by adding the 4BS and the carbon black, on the basis of the same curing process, the content of 4BS in the lead-acid storage battery polar plate can be increased, the size of 4BS crystals can be improved, the battery formation difficulty can be reduced, and the battery performance and the production efficiency can be improved.

The invention provides a semiconductor structure and a preparation method thereof, and the method at least comprises the steps: forming a plurality of active regions which are arranged at intervals ona semiconductor substrate, and forming a plurality of embedded gate assemblies in the active regions; forming a first isolation layer on the substrate; etching the first isolation layer to form a bitline contact hole; filling the line contact hole with a conductive material to form a bit line contact node having a first width, with a linear bit line having a second width less than the first width is formed over the bit line contact node. The bit line contact hole covers at least part of the active regions and part of the shallow trench isolation structure between the adjacent gate assembliesin the same active regions. The formed bit line is in good contact with a bit line contact node and well avoids a capacitor contact region. The optical proximity effect correction difficulty in the bit line forming process is reduced, the forming difficulty is reduced, and meanwhile the parasitic resistance in the bit line is effectively reduced. Reduction of the size of a memory is facilitated,and good functionality of the memory is ensured.

The invention discloses a strategy process processing method and device, computer equipment and a storage medium. The method comprises the following steps: outputting an editable graphic unit; in response to a selection operation of the user, adding a target graphic unit selected by the user into the canvas; configuring attribute information of the target graphic unit; and associating the target graph unit with the added graph unit to obtain a strategy flow chart. An editable graphic unit can be provided for a user, and the user can add a target graphic unit into a canvas through a selection operation. And the user configures attribute information of the target graphic unit and configures association between the target graphic unit and the added graphic unit to obtain the strategy flow chart. According to the technical scheme, a user does not need to edit codes, the user can quickly select the target graphic unit from the output editable graphic units through the visual graphic interface, the forming difficulty of the screening strategy process is reduced, and the usability of generation of the strategy process is improved.

The invention discloses a cooling process for a green pole plate of a lead-acid storage battery after curing, and aims to overcome the defects that the cooling time is long after the pole plate of the storage battery is cured and a lattice structure between an active substance on a surface of the pole plate and a grid is not stable so as to improve defective rate of the pole plate, and the surface of the pole plate is easy to carbonize so as to improve the formation difficulty of the pole plate and reduce the capacity and the cycle lifetime of the battery. The cooling process comprises the following steps of (a) placing the green pole plate which is cured just now in a curing chamber under a normal-temperature environment for normal-temperature cooling for 0.5-1.5 hours; (b) performing temperature reduction on the curing chamber placed with the green pole plate, adjusting a temperature to 5-10 DEG C, simultaneously blowing air by a fan, and controlling time for 2-3 hours; and (c) placing the green pole plate in the curing chamber under a room-temperature ventilation environment for 0.5-1 hour, wherein pole separation and brush can be performed.

The invention relates to a three-dimensional memory and a forming method thereof. The forming method of the three-dimensional memory comprises the following steps: providing a substrate; forming a first sacrificial layer including a first etching pattern on the substrate; the first etching pattern is backfilled, a second sacrificial layer comprising a second etching pattern is formed on the first sacrificial layer, and the projection of the first etching pattern intersects with the projection of the second etching pattern in the direction perpendicular to the substrate; etching the first sacrificial layer along the second etching pattern to form a third etching pattern communicated with the first etching pattern; and etching the substrate along the first etching pattern and the third etching pattern, and forming a combined pattern in the substrate. According to the invention, the morphology of the finally formed combined pattern is improved.

The embodiment of the invention discloses a memory and a manufacturing method thereof. The method comprises the steps of forming an epitaxial layer in a groove of a substrate; forming a protection layer covering the epitaxial layer in the groove; forming a stack structure on the protection layer, wherein the stack structure is used for forming a gate of a memory unit in the memory and the gate isused for controlling on or off of the memory unit; forming a through hole which penetrates through the stack structure and exposes the protection layer; removing the protection layer and exposing theepitaxial layer; and forming a channel region of the memory unit in the through hole, wherein the channel region is connected with the epitaxial layer and is used for the memory unit to store chargescorresponding to written data.

The invention provides a three-dimensional memory, a preparation method thereof and electronic equipment. The preparation method comprises the following steps: providing a substrate; forming a first laminated structure on one side of the substrate; forming a plurality of first channel holes which penetrate through the first laminated structure and extend to the substrate; forming an etching barrier layer filling the first channel holes; forming a second laminated structure on the first laminated structure and the etching barrier layer; forming a plurality of second channel holes penetrating through the second laminated structure; and removing the etching barrier layer to enable the first channel holes and the second channel holes to be communicated to form channel holes. The channel holes,which are formed in one step in related technologies, are formed in two steps in the method of the invention. The first channel holes close to the bottom are first formed, and then the other second channel holes communicated with the first channel holes are formed. According to the forming method provided by the invention, the forming difficulty of the channel holes can be reduced, the channel holes with excellent structures are formed, and the uniformity of the depth of the channel holes is improved.

The disclosed additive for positive pole of accumulator is composed of composition A and composition B according to weight ratio 1:2.8-3. Composition A contains Pb3O4 equal to or larger than 75%, and surplus is beta - PbO2. Composition B contains beta - PbO2 equal to or larger than 80%, and surplus is PbSO4. The invention also discloses a modified anode material of accumulator of using the said additive. The additive and anode material of accumulator can raise capacity of first time and cycle life of accumulator.