Formation method of semiconductor device

Abstract

The invention relates to a semiconductor device forming method, which comprises the steps of providing a substrate, and forming a plurality of initial fin parts which are separately arranged on the substrate; forming an isolation structure on the substrate; forming connecting layers on the side walls of the initial fin parts and between the adjacent initial fin parts; forming a dummy gate structure crossing the initial fin part and the connecting layer on the substrate, wherein the dummy gate structure covers the side wall of the connecting layer and part of the top surface of the initial fin part; forming grooves in the initial fin parts at the two sides of the dummy gate structures, and forming source-drain doping layers in the grooves; a dielectric layer is formed on the substrate, the dielectric layer covers the dummy gate structure and the source-drain doped layer, and the top surface of the dielectric layer is flush with the top surface of the dummy gate structure; removing the dummy gate structure to form a gate structure; according to the invention, the quality of the finally formed semiconductor device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] Metal-oxide-semiconductor field-effect transistor (MOSFET) is one of the most important elements in the modern integrated circuit, and the basic structure of MOSFET comprises: semiconductor substrate; Be positioned at the gate structure of semiconductor substrate surface, described gate structure comprises : a gate dielectric layer on the surface of the semiconductor substrate and a gate electrode layer on the surface of the gate dielectric layer; source and drain doped regions in the semiconductor substrate on both sides of the gate structure. [0003] With the development of semiconductor technology, the traditional planar MOSFET's ability to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) is an emerging multi-ga...

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Problems solved by technology

[0005] However, in the prior art, the electrical performance of the GAA structure MOSFET still needs to be improved

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