Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Infrared detector and its manufacturing method

A technology for infrared detectors and manufacturing methods, which is applied in the directions of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., and can solve the problem of restricting the industrialization of medium-wave InAs/InAsSb superlattice detectors, reducing device performance and reliability , extremely difficult to prepare Al-containing antimonides and other issues

Active Publication Date: 2021-04-23
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Al-containing materials are easily oxidized during growth and processing, which reduces the performance and reliability of devices.
In addition, AlAsSb is only suitable for molecular beam epitaxy (MBE) growth, while metal-organic chemical vapor deposition (MOCVD), another material growth method that has a dominant position in the industry, is extremely difficult to prepare high-quality Al-containing antimonides.
This limits the industrialization of medium-wave InAs / InAsSb superlattice detectors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Infrared detector and its manufacturing method
  • Infrared detector and its manufacturing method
  • Infrared detector and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0028] As a kind of implementing method of infrared detector of the present invention, this method comprises:

[0029] Step S1, on an N-type substrate 1 (preferably an N-type InAs substrate with a doping concentration of 1×10 19 cm -3 ) to form a detector mesa, the detector mesa includes an N-type InAsP / InAsSb superlattice absorption layer 2, an InPSb barrier layer 3 and an N-type InAsP / InAsSb stacked on the N-type substrate 1 in sequence Superlattice contact layer 4 .

[0030] Specifically, such as figure 1 As shown, in this step, after the N-type substrate 1 is subjected to high-temperature treatment to remove surface impurities, the stacked first N-type InAsP / InAsSb superlattice layer a, InPSb layer b, second N-type InAsP / InAsSb superlattice layer c. Among them, the growth source is TMIn, TMSb, AsH 3 and PH 3 , N-type dopant source is SiH 4 , the growth temperature is 600°C, and the reaction chamber pressure is 200Torr. Wherein, the InPSb layer b is not doped, has...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a manufacturing method of an infrared detector. The manufacturing method comprises: forming a detector mesa on an N-type substrate, and the detector mesa includes N-type InAsP / InAsSb superstructures formed sequentially on the N-type substrate. Lattice absorption layer, InPSb barrier layer and N-type InAsP / InAsSb superlattice contact layer; the first electrode is formed on the N-type InAsP / InAsSb superlattice contact layer on the detector table, and formed on the N-type substrate A second electrode corresponding to the detector mesa. The invention also discloses an infrared detector manufactured by the above manufacturing method. The invention solves the problem that it is difficult to form a heterojunction structure in the manufacturing process of the infrared detector.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an infrared detector and a manufacturing method thereof. Background technique [0002] Infrared radiation detection is an important part of infrared technology, widely used in thermal imaging, satellite remote sensing, gas monitoring, optical communication, spectral analysis and other fields. Antimonide II superlattice infrared detectors are considered to be one of the most ideal choices for the preparation of third-generation infrared detectors because of their good uniformity, low Auger recombination rate, and large wavelength adjustment range. Compared with mercury cadmium telluride infrared detectors (HgCdTe), it has better uniformity, repeatability, lower cost, and better performance in long-wave and very long-wave bands; compared with quantum well infrared detectors (QWIP), its quantum efficiency is higher High, smaller dark current, simpler process. [0003] At present, ant...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/11H01L31/0304H01L31/18C23C14/16C23C14/30C23C16/30C23C16/44
CPCC23C14/16C23C14/30C23C16/30C23C16/44H01L31/03046H01L31/11H01L31/1844Y02P70/50
Inventor 赵宇吴启花黄勇熊敏
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com